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Title: A single electron transistor charge sensor in strong rf fields

Abstract

We measure the charge sensitivity, S e, of a single electron transistor (SET) in the presence of strong (V rf ~ e/C g) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where C g is the gate capacitance. Although S e appears to degrade when exposed to V rf, we find that broadening of conduction peaks is largely due to the measurement technique and show that S e is maintained even with strong V rf present. We show cancellation of a known V rf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.

Authors:
 [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1496991
Alternate Identifier(s):
OSTI ID: 1477519
Report Number(s):
SAND-2019-1250J
Journal ID: ISSN 2158-3226; 672208
Grant/Contract Number:  
AC04-94AL85000; NA0003525; LDRD #191210
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 8; Journal Issue: 10; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Lewis, Rupert M., Harris, Charles Thomas, and Shaner, Eric A. A single electron transistor charge sensor in strong rf fields. United States: N. p., 2018. Web. doi:10.1063/1.5043212.
Lewis, Rupert M., Harris, Charles Thomas, & Shaner, Eric A. A single electron transistor charge sensor in strong rf fields. United States. doi:10.1063/1.5043212.
Lewis, Rupert M., Harris, Charles Thomas, and Shaner, Eric A. Mon . "A single electron transistor charge sensor in strong rf fields". United States. doi:10.1063/1.5043212. https://www.osti.gov/servlets/purl/1496991.
@article{osti_1496991,
title = {A single electron transistor charge sensor in strong rf fields},
author = {Lewis, Rupert M. and Harris, Charles Thomas and Shaner, Eric A.},
abstractNote = {We measure the charge sensitivity, Se, of a single electron transistor (SET) in the presence of strong (Vrf ~ e/Cg) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where Cg is the gate capacitance. Although Se appears to degrade when exposed to Vrf, we find that broadening of conduction peaks is largely due to the measurement technique and show that Se is maintained even with strong Vrf present. We show cancellation of a known Vrf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.},
doi = {10.1063/1.5043212},
journal = {AIP Advances},
issn = {2158-3226},
number = 10,
volume = 8,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Figure 1 Figure 1: (a) SEM micrograph of the device. b) Characteristic scan of Vsd bias vs. Vg. Line cuts at the c) Josephson quasiparticle resonances and d) coulomb blockade peaks outside the gap. Note that (b) is unintentionally offset in Vsd by about 200 μV, probably by input offsets in themore » amplifier chain, and a large discontinuity at Vsd = -0.65 mV is likely due to a range change error in the Vsd voltage generator.« less

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Works referenced in this record:

Offset masks for lift‐off photoprocessing
journal, September 1977

  • Dolan, G. J.
  • Applied Physics Letters, Vol. 31, Issue 5, p. 337-339
  • DOI: 10.1063/1.89690

    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.