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Title: Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga 2–x Fe x O 3 )

Abstract

Iron (Fe) doped gallium oxide (Ga2O3) compounds (Ga2-xFexO3; x=0.0-0.3; referred to GFO) were synthesized by the standard high-temperature solid-state chemical reaction method. X-ray diffraction (XRD) analyses confirmed that the sintered GFO compounds stabilized in monoclinic crystal structure with C2/m space group. Local structure and chemical bonding analyses using X-ray absorption near edge structure (XANES) revealed that the Fe occupies octahedral and tetrahedral sites similar to Ga in parent Ga2O3 lattice without considerable changes in the local symmetry. Morphology of the GFO compounds is characterized by the presence of rod-shaped particle (from around 2.0-3.5 µm) features. The energy dispersive X-ray spectroscopy (EDS) confirmed the chemical stoichiometry of the GFO compounds, where the atomic ratio of the constituted elements is in accordance with the calculated concentration values. The frequency and temperature dependent dielectric properties of the GFO compounds exhibited the traditional dielectric dispersion behavior. Relatively high dielectric constant at lower frequencies is attributed to Maxwell-Wagner type of dielectric relaxation which primarily originated from uncompensated charges at electrode material interface. Based on the results and analyses, the effect of Fe content on the crystal structure, chemical bonding and local structure, and dielectric properties of Ga2-xFexO3 compounds is established.Based on the results and analyses,more » the effects of Fe content on the crystal structure, chemical bonding and local structure, and dielectric properties of Ga2-xFexO3 compounds are established.« less

Authors:
; ; ;  [1]; ORCiD logo [1];  [1]; ORCiD logo
  1. Environmental Molecular Sciences Laboratory (EMSL), Pacific Northwest National Laboratory (PNNL), Richland, Washington 99352, United States
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496621
Report Number(s):
PNNL-SA-139749
Journal ID: ISSN 1932-7447
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 122; Journal Issue: 48; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

Citation Formats

Roy, Swadipta, Mallesham, B., Zade, Vishal B., Martinez, Abraham, Shutthanandan, V., Thevuthasan, S., and Ramana, C. V.. Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga 2–x Fe x O 3 ). United States: N. p., 2018. Web. doi:10.1021/acs.jpcc.8b07921.
Roy, Swadipta, Mallesham, B., Zade, Vishal B., Martinez, Abraham, Shutthanandan, V., Thevuthasan, S., & Ramana, C. V.. Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga 2–x Fe x O 3 ). United States. doi:10.1021/acs.jpcc.8b07921.
Roy, Swadipta, Mallesham, B., Zade, Vishal B., Martinez, Abraham, Shutthanandan, V., Thevuthasan, S., and Ramana, C. V.. Mon . "Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga 2–x Fe x O 3 )". United States. doi:10.1021/acs.jpcc.8b07921.
@article{osti_1496621,
title = {Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga 2–x Fe x O 3 )},
author = {Roy, Swadipta and Mallesham, B. and Zade, Vishal B. and Martinez, Abraham and Shutthanandan, V. and Thevuthasan, S. and Ramana, C. V.},
abstractNote = {Iron (Fe) doped gallium oxide (Ga2O3) compounds (Ga2-xFexO3; x=0.0-0.3; referred to GFO) were synthesized by the standard high-temperature solid-state chemical reaction method. X-ray diffraction (XRD) analyses confirmed that the sintered GFO compounds stabilized in monoclinic crystal structure with C2/m space group. Local structure and chemical bonding analyses using X-ray absorption near edge structure (XANES) revealed that the Fe occupies octahedral and tetrahedral sites similar to Ga in parent Ga2O3 lattice without considerable changes in the local symmetry. Morphology of the GFO compounds is characterized by the presence of rod-shaped particle (from around 2.0-3.5 µm) features. The energy dispersive X-ray spectroscopy (EDS) confirmed the chemical stoichiometry of the GFO compounds, where the atomic ratio of the constituted elements is in accordance with the calculated concentration values. The frequency and temperature dependent dielectric properties of the GFO compounds exhibited the traditional dielectric dispersion behavior. Relatively high dielectric constant at lower frequencies is attributed to Maxwell-Wagner type of dielectric relaxation which primarily originated from uncompensated charges at electrode material interface. Based on the results and analyses, the effect of Fe content on the crystal structure, chemical bonding and local structure, and dielectric properties of Ga2-xFexO3 compounds is established.Based on the results and analyses, the effects of Fe content on the crystal structure, chemical bonding and local structure, and dielectric properties of Ga2-xFexO3 compounds are established.},
doi = {10.1021/acs.jpcc.8b07921},
journal = {Journal of Physical Chemistry. C},
issn = {1932-7447},
number = 48,
volume = 122,
place = {United States},
year = {2018},
month = {10}
}