skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Abstract

Nowadays, the power electronics converter design is challenged with a request of high efficiency and compactness for various applications. To tackle this, the research community and the industry have almost fully exploited the silicon technology, leading to the development of new power transistors. The Gallium-Nitride (GaN) HEMTs can be promising power devices to replace the traditional power devices. Therefore, the performances of GaN-based converters should be assessed to validate the effectiveness in terms of efficiency and power density. Moreover, among the available converter topologies, the performance of the three-level Neutral Point Clamped (NPC) family can be enhanced with the GaN HEMTs. In light of the above, in this paper, the performance of a GaN-based three-level Active NPC (3L-ANPC) converter is evaluated in terms of power losses, volume impact of passive components, and output distortions. Simulations and experiments have been performed.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]
  1. Aalborg University, Denmark
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1495981
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: 4th IEEE Southern Power Electronics Conference (SPEC) - Nanyang, , Singapore - 12/10/2018 10:00:00 AM-12/13/2018 10:00:00 AM
Country of Publication:
United States
Language:
English

Citation Formats

Valante, Mauro, Iannuzzo, Francesco, Yang, Yongheng, and Gurpinar, Emre. Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications. United States: N. p., 2018. Web. doi:10.1109/SPEC.2018.8635942.
Valante, Mauro, Iannuzzo, Francesco, Yang, Yongheng, & Gurpinar, Emre. Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications. United States. doi:10.1109/SPEC.2018.8635942.
Valante, Mauro, Iannuzzo, Francesco, Yang, Yongheng, and Gurpinar, Emre. Sat . "Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications". United States. doi:10.1109/SPEC.2018.8635942. https://www.osti.gov/servlets/purl/1495981.
@article{osti_1495981,
title = {Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications},
author = {Valante, Mauro and Iannuzzo, Francesco and Yang, Yongheng and Gurpinar, Emre},
abstractNote = {Nowadays, the power electronics converter design is challenged with a request of high efficiency and compactness for various applications. To tackle this, the research community and the industry have almost fully exploited the silicon technology, leading to the development of new power transistors. The Gallium-Nitride (GaN) HEMTs can be promising power devices to replace the traditional power devices. Therefore, the performances of GaN-based converters should be assessed to validate the effectiveness in terms of efficiency and power density. Moreover, among the available converter topologies, the performance of the three-level Neutral Point Clamped (NPC) family can be enhanced with the GaN HEMTs. In light of the above, in this paper, the performance of a GaN-based three-level Active NPC (3L-ANPC) converter is evaluated in terms of power losses, volume impact of passive components, and output distortions. Simulations and experiments have been performed.},
doi = {10.1109/SPEC.2018.8635942},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: