High-quality, single-crystalline silicon-germanium films

Lagally, Max G.; Kuech, Thomas Francis; Guan, Yingxin; Scott, Shelley A.; Bhat, Abhishek; Cui, Xiaorui

High-quality, single-crystalline silicon-germanium films

Patent · 07 January 2019

OSTI ID:1495665

Lagally, Max G.; Kuech, Thomas Francis; Guan, Yingxin; Scott, Shelley A.; Bhat, Abhishek; Cui, Xiaorui

High-quality, single-crystalline silicon-germanium (Si.sub.(1-x)Ge.sub.x) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si.sub.(1-x)Ge.sub.x films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.

View Patent

Research Organization:: Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-03ER46028

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Number(s):: 10,176,991

Application Number:: 15/643,111

OSTI ID:: 1495665

Country of Publication:: United States

Language:: English

References (19)

Fabrication of strain-controlled SiGe/Ge MODFET with ultrahigh hole mobility Murakami, E.; Nakagawa, K.; Nishida, A. IEEE Transactions on Electron Devices, Vol. 41, Issue 5 https://doi.org/10.1109/16.285046	journal	May 1994
Terahertz quantum-cascade lasers Williams, Benjamin S. Nature Photonics, Vol. 1, Issue 9 https://doi.org/10.1038/nphoton.2007.166	journal	September 2007
Materials for terahertz science and technology Ferguson, Bradley; Zhang, Xi-Cheng Nature Materials, Vol. 1, Issue 1 https://doi.org/10.1038/nmat708	journal	September 2002
Multilayered paper-like electrodes composed of alternating stacked mesoporous Mo ₂ N nanobelts and reduced graphene oxide for flexible all-solid-state supercapacitors Ma, Guoqiang; Wang, Zhe; Gao, Biao Journal of Materials Chemistry A, Vol. 3, Issue 28 https://doi.org/10.1039/C5TA02851E	journal	January 2015
Nanomembrane-based materials for Group IV semiconductor quantum electronics Paskiewicz, D. M.; Savage, D. E.; Holt, M. V. Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep04218	journal	February 2014
Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping Zheng, X. H.; Chen, H.; Li, Y. K. Journal of Crystal Growth, Vol. 264, Issue 1-3 https://doi.org/10.1016/j.jcrysgro.2003.12.064	journal	March 2004
(Invited) Si, SiGe, Ge, and III-V Semiconductor Nanomembranes and Nanowires Enabled by SiGe Epitaxy Orlowski, Marius; Ndoye, Coumba; Liu, Tong 218th ECS Meeting, ECS Transactions https://doi.org/10.1149/1.3487608	conference	January 2010
(Invited) Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates Bai, Yu; Fitzgerald, Eugene A. 218th ECS Meeting, ECS Transactions https://doi.org/10.1149/1.3487624	conference	January 2010
Critical Thickness for the Si _{1- x} Ge _x /Si Heterostructure Fukuda, Yukio; Kohama, Yoshitaka; Ohmachi, Yoshiro Japanese Journal of Applied Physics, Vol. 29, Issue Part 2, No. 1 https://doi.org/10.1143/JJAP.29.L20	journal	January 1990
Mobility enhancement and quantum mechanical modeling in Ge/sub x/Si/sub 1-x/ channel MOSFETs from 90 to 300 K Garone, P. M.; Venkataraman, V.; Sturn, J. C. International Electron Devices Meeting 1991 [Technical Digest] https://doi.org/10.1109/IEDM.1991.235431	conference	January 1991
APPLIED PHYSICS: Searching for a Solid-State Terahertz Technology Lee, M.; Wanke, M. C. Science, Vol. 316, Issue 5821 https://doi.org/10.1126/science.1141012	journal	April 2007
Next Generation Device Grade Silicon-Germanium on Insulator Littlejohns, Callum G.; Nedeljkovic, Milos; Mallinson, Christopher F. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep08288	journal	February 2015
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2583	journal	March 2013
Synthesis, assembly and applications of semiconductor nanomembranes Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G. Nature, Vol. 477, Issue 7362, p. 45-53 https://doi.org/10.1038/nature10381	journal	September 2011
SiGe Nanomembrane Quantum-Well Infrared Photodetectors Durmaz, Habibe; Sookchoo, Pornsatit; Cui, Xiaorui ACS Photonics, Vol. 3, Issue 10 https://doi.org/10.1021/acsphotonics.6b00524	journal	September 2016
Electroluminescence from Si/SiGe quantum cascade emitters Paul, D. J.; Lynch, S. A.; Bates, R. Physica E: Low-dimensional Systems and Nanostructures, Vol. 16, Issue 3-4 https://doi.org/10.1016/S1386-9477(02)00689-6	journal	March 2003
Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors King, C. A.; Hoyt, J. L.; Gibbons, J. F. IEEE Transactions on Electron Devices, Vol. 36, Issue 10 https://doi.org/10.1109/16.40925	journal	January 1989
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates Shah, V. A.; Dobbie, A.; Myronov, M. Applied Physics Letters, Vol. 93, Issue 19 https://doi.org/10.1063/1.3023068	journal	November 2008
Design of n-type silicon-based quantum cascade lasers for terahertz light emission Driscoll, Kristina; Paiella, Roberto Journal of Applied Physics, Vol. 102, Issue 9 https://doi.org/10.1063/1.2803896	journal	November 2007

Similar Records

A pseudo-single-crystalline germanium film for flexible electronics

Journal Article · 2015 · Applied Physics Letters · OSTI ID:22415185

Electron microscopy of iron chalcogenide FeTe(Se) films

Journal Article · 2015 · Crystallography Reports · OSTI ID:22472326

Surfactant-Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium

Journal Article · 2007 · AIP Conference Proceedings · OSTI ID:21055062

High-quality, single-crystalline silicon-germanium films

Citation Formats

References (19)

Similar Records

Related Subjects