TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Lin, Wenwen; Stoumpos, Constantinos C.; Liu, Zhifu; Das, Sanjib; Kontsevoi, Oleg Y.; He, Yihui; Malliakas, Christos D.; Chen, Haijie; Wessels, Bruce W.; Kanatzidis, Mercouri G.

doi:10.1021/acsphotonics.7b00388

Title: TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Journal Article · Fri Jun 23 00:00:00 EDT 2017 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.7b00388· OSTI ID:1494820

Lin, Wenwen ^[1];

^[1]; Liu, Zhifu ^[2];

^[2]; Kontsevoi, Oleg Y. ^[3]; He, Yihui ^[1]; Malliakas, Christos D. ^[1]; Chen, Haijie ^[1];

^[2];

^[1]

Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Northwestern Univ., Evanston, IL (United States). Dept. of Physics and Astronomy

The semiconductor TlSn₂I₅ with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH₃NH₃PbX₃ (X = Br, I), TlSn₂I₅ features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (~10¹⁰ Ω·cm), and robust mechanical properties. Centimeter-size TlSn₂I₅ single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), ⁵⁷Co γ-rays (122 keV), and ²⁴¹Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10^-3 cm²·V^-1 and 94 ± 16 cm²·V^-1·s^-1, respectively. Unlike other halide perovskites, TlSn₂I₅ shows no signs of ionic polarization under long-term, high-voltage bias.

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Research Organization:: Northwestern Univ., Evanston, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: NA0002522; 2014-DN-077-ARI086-01; AC02-05CH11231

OSTI ID:: 1494820

Alternate ID(s):: OSTI ID: 1488927

Journal Information:: ACS Photonics, Vol. 4, Issue 7; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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Title: TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

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Title: TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature