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Title: TlSn 2I 5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Abstract

The semiconductor TlSn 2I 5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH 3NH 3PbX 3 (X = Br, I), TlSn 2I 5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (~10 10 Ω·cm), and robust mechanical properties. Centimeter-size TlSn 2I 5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10 -3 cm 2·V -1 and 94 ± 16 cm 2·V -1·s -1, respectively. Unlike other halide perovskites, TlSn 2I 5 shows no signs of ionic polarization under long-term, high-voltage bias.

Authors:
 [1]; ORCiD logo [1];  [2]; ORCiD logo [2];  [3];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
  2. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
  3. Northwestern Univ., Evanston, IL (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
OSTI Identifier:
1494820
Alternate Identifier(s):
OSTI ID: 1488927
Grant/Contract Number:  
NA0002522; 2014-DN-077-ARI086-01; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 4; Journal Issue: 7; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; hard radiation detection; γ-ray; crystal growth; semiconductor detector; halide perovskite and photon detection; halide perovskite; photon detection

Citation Formats

Lin, Wenwen, Stoumpos, Constantinos C., Liu, Zhifu, Das, Sanjib, Kontsevoi, Oleg Y., He, Yihui, Malliakas, Christos D., Chen, Haijie, Wessels, Bruce W., and Kanatzidis, Mercouri G. TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature. United States: N. p., 2017. Web. doi:10.1021/acsphotonics.7b00388.
Lin, Wenwen, Stoumpos, Constantinos C., Liu, Zhifu, Das, Sanjib, Kontsevoi, Oleg Y., He, Yihui, Malliakas, Christos D., Chen, Haijie, Wessels, Bruce W., & Kanatzidis, Mercouri G. TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature. United States. https://doi.org/10.1021/acsphotonics.7b00388
Lin, Wenwen, Stoumpos, Constantinos C., Liu, Zhifu, Das, Sanjib, Kontsevoi, Oleg Y., He, Yihui, Malliakas, Christos D., Chen, Haijie, Wessels, Bruce W., and Kanatzidis, Mercouri G. Fri . "TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature". United States. https://doi.org/10.1021/acsphotonics.7b00388. https://www.osti.gov/servlets/purl/1494820.
@article{osti_1494820,
title = {TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature},
author = {Lin, Wenwen and Stoumpos, Constantinos C. and Liu, Zhifu and Das, Sanjib and Kontsevoi, Oleg Y. and He, Yihui and Malliakas, Christos D. and Chen, Haijie and Wessels, Bruce W. and Kanatzidis, Mercouri G.},
abstractNote = {The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (~1010 Ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10-3 cm2·V-1 and 94 ± 16 cm2·V-1·s-1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.},
doi = {10.1021/acsphotonics.7b00388},
url = {https://www.osti.gov/biblio/1494820}, journal = {ACS Photonics},
issn = {2330-4022},
number = 7,
volume = 4,
place = {United States},
year = {2017},
month = {6}
}

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