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Title: Achieving band gap grading of CZTS and CZTSe materials

Patent ·
OSTI ID:1494133
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Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
10,134,929
Application Number:
14/883,300
OSTI ID:
1494133
Resource Relation:
Patent File Date: 2015 Oct 14
Country of Publication:
United States
Language:
English

References (9)

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon patent September 2009
Cu 2 Zn(Sn,Ge)Se 4 and Cu 2 Zn(Sn,Si)Se 4 alloys as photovoltaic materials: Structural and electronic properties journal March 2013
Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation journal April 2014
A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors journal March 2001
Enhancing the performance of CZTSSe solar cells with Ge alloying journal October 2012
Hydrazine-Processed Ge-Substituted CZTSe Solar Cells journal November 2012
Crystal chemistry and optical investigations of the Cu2Zn(Sn,Si)S4 series for photovoltaic applications journal December 2014
Compositional dependence of structural and electronic properties of Cu 2 ZnSn(S,Se) 4 alloys for thin film solar cells journal March 2011
The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2 journal June 2005

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