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Title: Method of growing germanium crystals

Abstract

In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.

Inventors:
;
Publication Date:
Research Org.:
South Dakota Board of Regents, Vermillion, SD (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1494120
Patent Number(s):
10,125,431
Application Number:
14/900,426
Assignee:
South Dakota Board of Regents (Vermillion, SD) SLAC
DOE Contract Number:  
FG02-10ER46709; SC0004768
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jun 20
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Guojian, and Mei, Dongming. Method of growing germanium crystals. United States: N. p., 2018. Web.
Wang, Guojian, & Mei, Dongming. Method of growing germanium crystals. United States.
Wang, Guojian, and Mei, Dongming. Tue . "Method of growing germanium crystals". United States. https://www.osti.gov/servlets/purl/1494120.
@article{osti_1494120,
title = {Method of growing germanium crystals},
author = {Wang, Guojian and Mei, Dongming},
abstractNote = {In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

Patent:

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