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Title: Negative longitudinal magnetoresistance in gallium arsenide quantum wells

Abstract

Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.

Authors:
 [1];  [2];  [3]; ORCiD logo [1];  [4];  [5];  [4];  [6];  [2];  [2];  [2];  [2];  [5]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Northern Illinois Univ., DeKalb, IL (United States)
  2. Princeton Univ., NJ (United States)
  3. Northern Illinois Univ., DeKalb, IL (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States); Nanjing Univ. (China)
  5. Argonne National Lab. (ANL), Argonne, IL (United States)
  6. Argonne National Lab. (ANL), Argonne, IL (United States); Oakland Univ., Rochester, MI (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation; Fulbright Program; National Science Foundation (NSF)
OSTI Identifier:
1493719
Grant/Contract Number:  
AC02-06CH11357; FG02-00ER45841
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xu, Jing, Ma, Meng K., Sultanov, Maksim, Xiao, Zhi-Li, Wang, Yong-Lei, Jin, Dafei, Lyu, Yang-Yang, Zhang, Wei, Pfeiffer, Loren N., West, Ken W., Baldwin, Kirk W., Shayegan, Mansour, and Kwok, Wai-Kwong. Negative longitudinal magnetoresistance in gallium arsenide quantum wells. United States: N. p., 2019. Web. doi:10.1038/s41467-018-08199-2.
Xu, Jing, Ma, Meng K., Sultanov, Maksim, Xiao, Zhi-Li, Wang, Yong-Lei, Jin, Dafei, Lyu, Yang-Yang, Zhang, Wei, Pfeiffer, Loren N., West, Ken W., Baldwin, Kirk W., Shayegan, Mansour, & Kwok, Wai-Kwong. Negative longitudinal magnetoresistance in gallium arsenide quantum wells. United States. doi:10.1038/s41467-018-08199-2.
Xu, Jing, Ma, Meng K., Sultanov, Maksim, Xiao, Zhi-Li, Wang, Yong-Lei, Jin, Dafei, Lyu, Yang-Yang, Zhang, Wei, Pfeiffer, Loren N., West, Ken W., Baldwin, Kirk W., Shayegan, Mansour, and Kwok, Wai-Kwong. Thu . "Negative longitudinal magnetoresistance in gallium arsenide quantum wells". United States. doi:10.1038/s41467-018-08199-2. https://www.osti.gov/servlets/purl/1493719.
@article{osti_1493719,
title = {Negative longitudinal magnetoresistance in gallium arsenide quantum wells},
author = {Xu, Jing and Ma, Meng K. and Sultanov, Maksim and Xiao, Zhi-Li and Wang, Yong-Lei and Jin, Dafei and Lyu, Yang-Yang and Zhang, Wei and Pfeiffer, Loren N. and West, Ken W. and Baldwin, Kirk W. and Shayegan, Mansour and Kwok, Wai-Kwong},
abstractNote = {Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.},
doi = {10.1038/s41467-018-08199-2},
journal = {Nature Communications},
issn = {2041-1723},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Fig. 1 Fig. 1: Negative longitudinal magnetoresistance in GaAs quantum well. a Micrograph of the sample in Hall bar geometry with width of Ly= 50 µm and voltage lead distance of Lx= 100 µm. b Schematic showing the definition of the angle θ between the magnetic field B and the direction ofmore » the current I, with θ= 0° for B//I and θ= 90° for B⊥I. c Magnetic field dependence of the resistance Rxx(B) at various field orientations. Negative magnetoresistance can be clearly seen at θ≤ 6°. d Temperature dependence of the magnetoresistance (MR) at magnetic fields from B= 0.5 to 9.0 T at intervals of 0.5 T at B//I, where MR= [R(B)− R0]/R0, with R0 being the longitudinal resistance Rxx at zero field. e Representative R(B) curves showing evolution of the MR feature with temperature. The chosen temperatures are given in the corresponding panels and also marked in d. In e, symbols are experimental data; green lines are fits to the data at T= 133 and 3 K using Eq. 2 with values of the five variables of εd= 0.727, γd= 0.295, α= 0.148 T−2, βs= 6.83 × 10-4 T−2 and βp= 0.12 T−2 and εd= 0.818, γd= 0.21, α= 20 T−2, βs= 0.016 T−2 and βp= 35 T−2, respectively; red lines (for T= 250, 150 and 138 K) are fits with the reduced form of Eq. 2 for the serial scenario, with fitting parameters presented in Fig. 4, and the magenta line (for T= 70 K) describes a quadratic magnetic field dependence R(B)= R0 (1+ βB2), with β= 1.4 × 10−3 T−2 and the measured R0= 543.4Ω« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.