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Title: Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films

Abstract

Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III–V semiconductors, and adversely affect heat dissipation in, for example, nitride-based high-power electronic devices. For decades, conventional nonlinear elasticity models have predicted that this thermal resistance is only appreciable when the heat flux is perpendicular to the dislocations. However, this dislocation-induced anisotropic thermal transport has yet to be seen experimentally. Using time-domain thermoreflectance, we measure strong thermal transport anisotropy governed by highly oriented threading dislocation arrays throughout micrometre-thick, single-crystal indium nitride films. We find that the cross-plane thermal conductivity is almost tenfold higher than the in-plane thermal conductivity at 80 K when the dislocation density is ~3 × 10 10 cm –2. Furthermore, this large anisotropy is not predicted by conventional models. With enhanced understanding of dislocation–phonon interactions, our results may allow the tailoring of anisotropic thermal transport with line defects, and could facilitate methods for directed heat dissipation in the thermal management of diverse device applications.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [4]; ORCiD logo [3];  [2]; ORCiD logo [5]
  1. National Univ. of Singapore (Singapore); Tsinghua Univ., Shenzhen (China)
  2. Technical Univ. of Munich, Garching (Germany)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. (Zi-Jian) [Technical Univ. of Munich, Garching (Germany)
  5. National Univ. of Singapore (Singapore)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1493152
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1476-1122
Publisher:
Springer Nature - Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sun, Bo, Haunschild, Georg, Polanco, Carlos A., Ju, James, Lindsay, Lucas R., Koblmüller, Gregor, and Koh, Yee Kan. Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films. United States: N. p., 2018. Web. doi:10.1038/s41563-018-0250-y.
Sun, Bo, Haunschild, Georg, Polanco, Carlos A., Ju, James, Lindsay, Lucas R., Koblmüller, Gregor, & Koh, Yee Kan. Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films. United States. doi:10.1038/s41563-018-0250-y.
Sun, Bo, Haunschild, Georg, Polanco, Carlos A., Ju, James, Lindsay, Lucas R., Koblmüller, Gregor, and Koh, Yee Kan. Mon . "Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films". United States. doi:10.1038/s41563-018-0250-y.
@article{osti_1493152,
title = {Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films},
author = {Sun, Bo and Haunschild, Georg and Polanco, Carlos A. and Ju, James and Lindsay, Lucas R. and Koblmüller, Gregor and Koh, Yee Kan},
abstractNote = {Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III–V semiconductors, and adversely affect heat dissipation in, for example, nitride-based high-power electronic devices. For decades, conventional nonlinear elasticity models have predicted that this thermal resistance is only appreciable when the heat flux is perpendicular to the dislocations. However, this dislocation-induced anisotropic thermal transport has yet to be seen experimentally. Using time-domain thermoreflectance, we measure strong thermal transport anisotropy governed by highly oriented threading dislocation arrays throughout micrometre-thick, single-crystal indium nitride films. We find that the cross-plane thermal conductivity is almost tenfold higher than the in-plane thermal conductivity at 80 K when the dislocation density is ~3 × 1010 cm–2. Furthermore, this large anisotropy is not predicted by conventional models. With enhanced understanding of dislocation–phonon interactions, our results may allow the tailoring of anisotropic thermal transport with line defects, and could facilitate methods for directed heat dissipation in the thermal management of diverse device applications.},
doi = {10.1038/s41563-018-0250-y},
journal = {Nature Materials},
issn = {1476-1122},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {12}
}

Journal Article:
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Works referenced in this record:

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