Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric
- Univ. College Dublin, Dublin (Ireland); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- National Academy of Sciences of Ukraine, Kyiv (Ukraine)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Air Force Research Lab, Wright-Patterson Air Force Base, OH (United States); UES, Inc., Beavercreek, OH (United States)
- Univ. of Aveiro, Aveiro (Portugal)
- Univ. College Dublin, Dublin (Ireland)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Here, the interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as –3.2m4/C2 and a resulting bulk piezoelectric coefficient d33 up to –85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few μC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few-layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials, and might facilitate the quest toward alternative ultrathin functional devices incorporating electromechanical response.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC05-00OR22725; CNMS2017-R49; FG02-09ER46554; AC02-05CH11231
- OSTI ID:
- 1493146
- Alternate ID(s):
- OSTI ID: 1493111; OSTI ID: 1597919
- Journal Information:
- Physical Review Materials, Vol. 3, Issue 2; ISSN 2475-9953
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Tunable quadruple-well ferroelectric van der Waals crystals
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journal | November 2019 |
Negative piezoelectric response of van der Waals layered bismuth tellurohalides
|
journal | September 2019 |
Negative piezoelectric response of van der Waals layered bismuth tellurohalides | text | January 2019 |
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