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Title: Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al 2 O 3 sandwich structures

Abstract

Topological insulators hold great potential for efficient information processing and storage. Using density functional theory calculations, we predict that a honeycomb lead monolayer can be stabilized on an Al2O3 (0001) substrate to become topologically non-trivial with a sizeable band gap (~0.27 eV). Furthermore, we propose to use a hexagonal boron-nitride (h-BN) monolayer as a protection for the topological states of Pb/Al2O3 and Sn/Al2O3. Our findings suggest new possibilities for designing and protecting two-dimensional TIs for practical applications.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [3]; ORCiD logo [2]
  1. Univ. of California, Irvine, CA (United States). Dept. of Physics and Astronomy; Fudan Univ., Shanghai (China). State Key Lab. of Surface Physics and Dept. of Physics
  2. Univ. of California, Irvine, CA (United States). Dept. of Physics and Astronomy; Nanjing Univ. of Aeronautics and Astronautics (China). College of Science
  3. Univ. of California, Irvine, CA (United States). Dept. of Physics and Astronomy
  4. Fudan Univ., Shanghai (China). State Key Lab. of Surface Physics and Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory-National Energy Research Scientific Computing Center
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1492965
DOE Contract Number:  
FG02-05ER46237; SC0012670
Resource Type:
Journal Article
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 9; Journal Issue: 9; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Hui, Lu, D., Kim, J., Wang, Z., Pi, S. T., and Wu, R. Q. Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al 2 O 3 sandwich structures. United States: N. p., 2017. Web. doi:10.1039/c7nr00631d.
Wang, Hui, Lu, D., Kim, J., Wang, Z., Pi, S. T., & Wu, R. Q. Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al 2 O 3 sandwich structures. United States. doi:10.1039/c7nr00631d.
Wang, Hui, Lu, D., Kim, J., Wang, Z., Pi, S. T., and Wu, R. Q. Sun . "Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al 2 O 3 sandwich structures". United States. doi:10.1039/c7nr00631d.
@article{osti_1492965,
title = {Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al 2 O 3 sandwich structures},
author = {Wang, Hui and Lu, D. and Kim, J. and Wang, Z. and Pi, S. T. and Wu, R. Q.},
abstractNote = {Topological insulators hold great potential for efficient information processing and storage. Using density functional theory calculations, we predict that a honeycomb lead monolayer can be stabilized on an Al2O3 (0001) substrate to become topologically non-trivial with a sizeable band gap (~0.27 eV). Furthermore, we propose to use a hexagonal boron-nitride (h-BN) monolayer as a protection for the topological states of Pb/Al2O3 and Sn/Al2O3. Our findings suggest new possibilities for designing and protecting two-dimensional TIs for practical applications.},
doi = {10.1039/c7nr00631d},
journal = {Nanoscale},
issn = {2040-3364},
number = 9,
volume = 9,
place = {United States},
year = {2017},
month = {1}
}

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