skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

Inventors:
; ;
Publication Date:
Research Org.:
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1492817
Patent Number(s):
10,121,657
Application Number:
15/151,295
Assignee:
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ) ARPA-E
DOE Contract Number:  
AR0000453
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 May 10
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation. United States: N. p., 2018. Web.
Koeck, Franz A., Chowdhury, Srabanti, & Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation. United States.
Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Tue . "Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation". United States. https://www.osti.gov/servlets/purl/1492817.
@article{osti_1492817,
title = {Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation},
author = {Koeck, Franz A. and Chowdhury, Srabanti and Nemanich, Robert J.},
abstractNote = {Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2018},
month = {Tue Nov 06 00:00:00 EST 2018}
}

Patent:

Save / Share:

Works referenced in this record:

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition
journal, July 2013


Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma
journal, May 2009


Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films
journal, June 2014

  • Janssen, Wiebke; Turner, Stuart; Sakr, Georges
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 8, p. 705-709
  • DOI: 10.1002/pssr.201409235

Characterization of specific contact resistance on heavily phosphorus-doped diamond films
journal, May 2009

  • Kato, Hiromitsu; Takeuchi, Daisuke; Tokuda, Norio
  • Diamond and Related Materials, Vol. 18, Issue 5-8, p. 782-785
  • DOI: 10.1016/j.diamond.2009.01.033

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application
journal, March 2016


n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface
journal, October 2007

  • Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi
  • Journal of Physics D: Applied Physics, Vol. 40, Issue 20, p. 6189-6200
  • DOI: 10.1088/0022-3727/40/20/S05

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films
journal, December 2012

  • Koeck, Franz A. M.; Nemanich, Robert J.
  • Journal of Applied Physics, Vol. 112, Issue 11, Article No. 113707
  • DOI: 10.1063/1.4766442

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films
journal, February 2009


Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure
journal, August 2011

  • Koeck, Franz A. M.; Nemanich, Robert J.; Balasubramaniam, Yasodhaadevi
  • Diamond and Related Materials, Vol. 20, Issue 8, p. 1229-1233
  • DOI: 10.1016/j.diamond.2011.06.032

CVD diamond—Research, applications, and challenges
journal, June 2014

  • Nemanich, Robert J.; Carlisle, John A.; Hirata, Atsushi
  • MRS Bulletin, Vol. 39, Issue 6, p. 490-494
  • DOI: 10.1557/mrs.2014.97

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
journal, December 2014

  • Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.
  • Applied Physics Letters, Vol. 105, Issue 23, Article No. 232106
  • DOI: 10.1063/1.4903779

n-Type CVD diamond: Epitaxy and doping
journal, October 2011

  • Pinault-Thaury, M.-A.; Tillocher, T.; Habka, N.
  • Materials Science and Engineering: B, Vol. 176, Issue 17, p. 1401-1408
  • DOI: 10.1016/j.mseb.2011.02.015

Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth
journal, November 2011


Phosphorus incorporation in plasma deposited diamond films
journal, February 1994

  • Schauer, S. N.; Flemish, J. R.; Wittstruck, R.
  • Applied Physics Letters, Vol. 64, Issue 9, p. 1094-1096
  • DOI: 10.1063/1.110943

High performance isothermal photo-thermionic solar converters
journal, June 2013

  • Segev, Gideon; Kribus, Abraham; Rosenwaks, Yossi
  • Solar Energy Materials and Solar Cells, Vol. 113, p. 114-123
  • DOI: 10.1016/j.solmat.2013.02.002

Impurity-to-band activation energy in phosphorus doped diamond
journal, August 2013

  • Stenger, I.; Pinault-Thaury, M.-A.; Kociniewski, T.
  • Journal of Applied Physics, Vol. 114, Issue 7, Article No. 073711
  • DOI: 10.1063/1.4818946

Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films
journal, November 2011

  • Sun, Tianyin; Koeck, Franz A. M.; Zhu, Chiyu
  • Applied Physics Letters, Vol. 99, Issue 20, Article No. 202101
  • DOI: 10.1063/1.3658638