Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

Inventors:: Koeck, Franz A.; Chowdhury, Srabanti; Nemanich, Robert J.

Publication Date:: Tue Nov 06 00:00:00 EST 2018

Research Org.:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1492817

Patent Number(s):: 10,121,657

Application Number:: 15/151,295

Assignee:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ) ARPA-E

DOE Contract Number:: AR0000453

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 May 10

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation.  United States: N. p., 2018. 
        Web.

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                    Koeck, Franz A., Chowdhury, Srabanti, & Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation.  United States.

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                    Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Tue .  
        "Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation".  United States.  https://www.osti.gov/servlets/purl/1492817.

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@article{osti_1492817,

  title        = {Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation},

  author       = {Koeck, Franz A. and Chowdhury, Srabanti and Nemanich, Robert J.},

  abstractNote = {Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.},

  doi          = {},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Nov 06 00:00:00 EST 2018},

  month        = {Tue Nov 06 00:00:00 EST 2018}

}

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Similar Records

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Citation Formats

Thermionic cathode of high emissive power for an electric tube, and process for its manufacture patent, June 1988

Low energy ion doping of growing diamond by CVD patent, August 1993

Flat panel display based on diamond thin films patent, September 1996

Collector for thermionic energy converter covered with carbon like material and having a low electronic work function patent, November 1996

Method for making inversion mode diamond electron source patent, May 1997

Method of forming a boron-doped diamond film by chemical vapor deposition patent, June 1997

Method for manufacture of field emission array patent, August 1999

Synthesis of phosphorus-doped diamond patent, October 1999

Hybrid thermionic energy converter and method patent, December 2002

Low work function materials for microminiature energy conversion and recovery applications patent, May 2003

System and method for producing synthetic diamond patent, June 2003

High-speed diamond growth using a microwave plasma in pulsed mode patent, February 2010

Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same patent, December 2011

Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations patent, May 2012

High uniformity boron doped diamond material patent, October 2012

Low work function diamond surface and radiation energy converters using same patent, December 2013

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same patent, November 2014

Semiconductor device and method for manufacturing the same patent, November 2014

Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition journal, August 2015

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition journal, July 2013

Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma journal, May 2009

Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films journal, June 2014

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Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application journal, March 2016

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface journal, October 2007

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films journal, December 2012

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films journal, February 2009

Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure journal, August 2011

CVD diamond—Research, applications, and challenges journal, June 2014

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond journal, December 2014

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Phosphorus incorporation in plasma deposited diamond films journal, February 1994

High performance isothermal photo-thermionic solar converters journal, June 2013

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Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films journal, November 2011

Thermionic cathode of high emissive power for an electric tube, and process for its manufacture
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Low energy ion doping of growing diamond by CVD
patent, August 1993

Flat panel display based on diamond thin films
patent, September 1996

Collector for thermionic energy converter covered with carbon like material and having a low electronic work function
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Method for making inversion mode diamond electron source
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Method of forming a boron-doped diamond film by chemical vapor deposition
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Method for manufacture of field emission array
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Hybrid thermionic energy converter and method
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patent, June 2003

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patent, February 2010

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patent, December 2011

Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations
patent, May 2012

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Low work function diamond surface and radiation energy converters using same
patent, December 2013

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
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Semiconductor device and method for manufacturing the same
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Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition
journal, August 2015

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journal, July 2013

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journal, May 2009

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journal, June 2014

Characterization of specific contact resistance on heavily phosphorus-doped diamond films
journal, May 2009

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application
journal, March 2016

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface
journal, October 2007

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films
journal, December 2012

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films
journal, February 2009

Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure
journal, August 2011

CVD diamond—Research, applications, and challenges
journal, June 2014

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
journal, December 2014

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journal, October 2011

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journal, November 2011

Phosphorus incorporation in plasma deposited diamond films
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