Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

Inventors:: Koeck, Franz A.; Chowdhury, Srabanti; Nemanich, Robert J.

Publication Date:: 2018-11-06

Research Org.:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1492817

Patent Number(s):: 10,121,657

Application Number:: 15/151,295

Assignee:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ)

DOE Contract Number:: AR0000453

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 May 10

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation.  United States: N. p., 2018. 
        Web.

Copy to clipboard


                    Koeck, Franz A., Chowdhury, Srabanti, & Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation.  United States.

Copy to clipboard


                    Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Tue .  
        "Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation".  United States.  https://www.osti.gov/servlets/purl/1492817.

Copy to clipboard


                    
@article{osti_1492817,

  title        = {Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation},

  author       = {Koeck, Franz A. and Chowdhury, Srabanti and Nemanich, Robert J.},

  abstractNote = {Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1492817},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {11}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications
journal, January 2009

Luong, John H. T.; Male, Keith B.; Glennon, Jeremy D.
The Analyst, Vol. 134, Issue 10, p. 1965-1979
https://doi.org/10.1039/b910206j

Flat panel display based on diamond thin films
patent, September 1996

Kumar, Nalin; Xie, Chenggang
US Patent Document 5,551,903
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5551903

Thermionic electron emission from low work-function phosphorus doped diamond films
journal, May 2009

Koeck, Franz A. M.; Nemanich, Robert J.; Lazea, Andrada
Diamond and Related Materials, Vol. 18, Issue 5-8
https://doi.org/10.1016/j.diamond.2009.01.024

Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition
journal, August 2015

Maida, Osamu; Tada, Shuhei; Nishio, Haruki
Journal of Crystal Growth, Vol. 424, p. 33-37
https://doi.org/10.1016/j.jcrysgro.2015.04.037

Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces
journal, July 1998

Baumann, P. K.; Nemanich, R. J.
Surface Science, Vol. 409, Issue 2, p. 320-335
https://doi.org/10.1016/S0039-6028(98)00259-3

Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth
journal, November 2011

Pinault-Thaury, M.-A.; Tillocher, T.; Kobor, D.
Journal of Crystal Growth, Vol. 335, Issue 1, p. 31-36
https://doi.org/10.1016/j.jcrysgro.2011.06.007

Thermionic cathode of high emissive power for an electric tube, and process for its manufacture
patent, June 1988

Buxbaum, Charley
US Patent Document 4,752,713
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F4752713

Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same
patent, December 2011

Yamada, Takatoshi; Shikata, Shinichi
US Patent Document 8,075,359
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8075359

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
patent, November 2014

Kato, Hiromitsu; Yamasaki, Satoshi; Ookushi, Hideyo
US Patent Document 8,876,973
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8876973

Method for making inversion mode diamond electron source
patent, May 1997

Kane, Robert; Zhu, Xiaodong
US Patent Document 5,631,196
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5631196

Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure
journal, August 2011

Koeck, Franz A. M.; Nemanich, Robert J.; Balasubramaniam, Yasodhaadevi
Diamond and Related Materials, Vol. 20, Issue 8, p. 1229-1233
https://doi.org/10.1016/j.diamond.2011.06.032

Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films
journal, June 2014

Janssen, Wiebke; Turner, Stuart; Sakr, Georges
physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 8, p. 705-709
https://doi.org/10.1002/pssr.201409235

Method of forming a boron-doped diamond film by chemical vapor deposition
patent, June 1997

Chen, Chia-Fu; Chen, Sheng-Hsiung; Hong, Tsao-Ming
US Patent Document 5,635,258
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5635258

Semiconductor device and method for manufacturing the same
patent, November 2014

Suzuki, Mariko; Sakai, Tadashi; Sakuma, Naoshi
US Patent Document 8,878,190
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8878190

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface
journal, October 2007

Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi
Journal of Physics D: Applied Physics, Vol. 40, Issue 20, p. 6189-6200
https://doi.org/10.1088/0022-3727/40/20/S05

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
journal, December 2014

Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.
Applied Physics Letters, Vol. 105, Issue 23, Article No. 232106
https://doi.org/10.1063/1.4903779

Method for manufacture of field emission array
patent, August 1999

Mearini, Gerald; Kusner, Robert
US Patent Document 5,944,573
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5944573

CVD diamond—Research, applications, and challenges
journal, June 2014

Nemanich, Robert J.; Carlisle, John A.; Hirata, Atsushi
MRS Bulletin, Vol. 39, Issue 6, p. 490-494
https://doi.org/10.1557/mrs.2014.97

Phosphorus-doped chemical vapor deposition of diamond
journal, April 2000

Koizumi, Satoshi; Teraji, Tokuyuki; Kanda, Hisao
Diamond and Related Materials, Vol. 9, Issue 3-6
https://doi.org/10.1016/S0925-9635(00)00217-X

Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate
journal, October 2014

Sun, Tian Yin; Koeck, Franz A. M.; Nemanich, Robert J.
Advances in Science and Technology, Vol. 95
https://doi.org/10.4028/www.scientific.net/AST.95.1

Phosphorus incorporation in plasma deposited diamond films
journal, February 1994

Schauer, S. N.; Flemish, J. R.; Wittstruck, R.
Applied Physics Letters, Vol. 64, Issue 9, p. 1094-1096
https://doi.org/10.1063/1.110943

Synthesis of phosphorus-doped diamond
patent, October 1999

Kamo, Mutsukazu; Koizumi, Satoshi; Ozaki, Hiroyuki
US Patent Document 5,961,717
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5961717

Low work function diamond surface and radiation energy converters using same
patent, December 2013

Fox, Neil; Martin, Tomas; O'Donnell, Kane
US Patent Document 8,617,651
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8617651

Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma
journal, May 2009

Corbella, C.; Rubio-Roy, M.; Bertran, E.
Diamond and Related Materials, Vol. 18, Issue 5-8, p. 1035-1038
https://doi.org/10.1016/j.diamond.2009.01.003

n-Type CVD diamond: Epitaxy and doping
journal, October 2011

Pinault-Thaury, M.-A.; Tillocher, T.; Habka, N.
Materials Science and Engineering: B, Vol. 176, Issue 17, p. 1401-1408
https://doi.org/10.1016/j.mseb.2011.02.015

Hybrid thermionic energy converter and method
patent, December 2002

Kucherov, Yan; Hagelstein, Peter
US Patent Document 6,489,704
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6489704

Photon-enhanced thermionic emission from heterostructures with low interface recombination
journal, March 2013

Schwede, J. W.; Sarmiento, T.; Narasimhan, V. K.
Nature Communications, Vol. 4, Issue 1
https://doi.org/10.1038/ncomms2577

Collector for thermionic energy converter covered with carbon like material and having a low electronic work function
patent, November 1996

Holmlid, Leif; Svensson, Robert
US Patent Document 5,578,886
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5578886

Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations
patent, May 2012

Nemanich, Robert; Koeck, Franz
US Patent Document 8,188,456
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8188456

System and method for producing synthetic diamond
patent, June 2003

Linares, Robert; Doering, Patrick
US Patent Document 6,582,513
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6582513

High-speed diamond growth using a microwave plasma in pulsed mode
patent, February 2010

Gicquel, Alix; Silva, Francois; Duten, Xavier
US Patent Document 7,662,441
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7662441

Low energy ion doping of growing diamond by CVD
patent, August 1993

Schmidt, Howard
US Patent Document 5,234,724
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F5234724

High performance isothermal photo-thermionic solar converters
journal, June 2013

Segev, Gideon; Kribus, Abraham; Rosenwaks, Yossi
Solar Energy Materials and Solar Cells, Vol. 113, p. 114-123
https://doi.org/10.1016/j.solmat.2013.02.002

Impurity-to-band activation energy in phosphorus doped diamond
journal, August 2013

Stenger, I.; Pinault-Thaury, M.-A.; Kociniewski, T.
Journal of Applied Physics, Vol. 114, Issue 7, Article No. 073711
https://doi.org/10.1063/1.4818946

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application
journal, March 2016

Kato, Hiromitsu; Takeuchi, Daisuke; Ogura, Masahiko
Diamond and Related Materials, Vol. 63, p. 165-168
https://doi.org/10.1016/j.diamond.2015.08.002

Photon-enhanced thermionic emission for solar concentrator systems
journal, August 2010

Schwede, Jared W.; Bargatin, Igor; Riley, Daniel C.
Nature Materials, Vol. 9, Issue 9
https://doi.org/10.1038/nmat2814

Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films
journal, November 2011

Sun, Tianyin; Koeck, Franz A. M.; Zhu, Chiyu
Applied Physics Letters, Vol. 99, Issue 20, Article No. 202101
https://doi.org/10.1063/1.3658638

Low work function materials for microminiature energy conversion and recovery applications
patent, May 2003

Zavadil, Kevin; Ruffner, Judith; King, Donald
US Patent Document 6,563,256
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6563256

Characterization of specific contact resistance on heavily phosphorus-doped diamond films
journal, May 2009

Kato, Hiromitsu; Takeuchi, Daisuke; Tokuda, Norio
Diamond and Related Materials, Vol. 18, Issue 5-8, p. 782-785
https://doi.org/10.1016/j.diamond.2009.01.033

Doped diamond thin film electron sources for thermionic energy conversion
conference, July 2013

Koeck, Franz A. M.; Nemanich, Robert J.; Sharp, Jeff
2013 26th International Vacuum Nanoelectronics Conference (IVNC)
https://doi.org/10.1109/IVNC.2013.6624727

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films
journal, February 2009

Koeck, Franz A. M.; Nemanich, Robert J.
Diamond and Related Materials, Vol. 18, Issue 2-3, p. 232-234
https://doi.org/10.1016/j.diamond.2008.11.023

High uniformity boron doped diamond material
patent, October 2012

Scarsbrook, Geoffrey
US Patent Document 8,277,622
https://doi.org/http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8277622

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition
journal, July 2013

Nakazawa, Hideki; Kamata, Ryosuke; Miura, Soushi
Thin Solid Films, Vol. 539, p. 134-138
https://doi.org/10.1016/j.tsf.2013.05.089

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films
journal, December 2012

Koeck, Franz A. M.; Nemanich, Robert J.
Journal of Applied Physics, Vol. 112, Issue 11, Article No. 113707
https://doi.org/10.1063/1.4766442

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates
journal, September 2014

Sun, Tianyin; Koeck, Franz A. M.; Rezikyan, Aram
Physical Review B, Vol. 90, Issue 12
https://doi.org/10.1103/PhysRevB.90.121302

P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm
conference, June 2015

Dutta, M.; Koeck, F. A. M.; Nemanich, R. J.
2015 73rd Annual Device Research Conference (DRC)
https://doi.org/10.1109/DRC.2015.7175618

Similar records in OSTI.GOV collections:

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

Journal Article Ohtani, Ryota ; Yamamoto, Takashi ; Janssens, Stoffel D. ; ... - Applied Physics Letters

Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the dopingmore »« less
https://doi.org/10.1063/1.4903779
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

Journal Article Balasubramaniam, Y. ; Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be ; Janssens, S. D. ; ... - Applied Physics Letters

The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates formore »« less
https://doi.org/10.1063/1.4960970
Diamond/diamond-like thin film growth in a methane plasma on unetched, unheated, N-type Si(100) substrates

Conference Williams, E ; Richardson, J Jr ; Anderson, D ; ...

A report on the deposition of diamond/diamond-like thin films on unheated, unetched, n-type Si(100) substrates is made. The report contains values of methane flow rate for selected hydrogen flow rate and Rf power that yield a diamond/diamond-like index of refraction. Plasma Enhanced Chemical Vapor Deposition (PECVD) was the technique used to grow the films in this work. A Leybold-Heraeus vacuum pump was used to evacuate the chamber to a pressure of 5.9 {times} 10{sup {minus}2} Torr before admitting a hydrogen-methane gas mixture. The total chamber pressure was measured with a Baratron pressure gauge. A 30 kHz Rf plasma was excitedmore »« less
n-type doping of (001)-oriented single-crystalline diamond by phosphorus

Journal Article Kato, Hiromitsu ; Yamasaki, Satoshi ; Okushi, Hideyo - Applied Physics Letters

n-type doping of (001)-oriented single-crystalline diamond has been achieved using PH{sub 3} as doping gas and applying a newly optimized homoepitaxial growth technique based on plasma-enhanced chemical vapor deposition. Hall-effect measurements indicate n-type conductivity with highest mobilities of {approx}350 cm{sup 2}/Vs. Phosphorus doping is confirmed by secondary-ion mass spectroscopy.
https://doi.org/10.1063/1.1944228
Low temperature growth of ultrananocrystalline diamond on glass substrates for field emission applications.

Conference Corrigan, T D ; Krauss, A R ; Gruen, D M ; ...

Recent studies of field emission from diamond have focused on the feasibility of growing diamond films on glass substrates, which are the preferred choice for cost-effective, large area flat panel displays. However, diamond growth on glass requires temperatures {le} 500 C, which is much lower than the temperature needed for growing conventional microwave plasma chemical vapor deposition (CVD) diamond films. In addition, it is desirable to minimize the deposition time for cost-effective processing. The authors have grown ultrananocrystalline diamond (UNCD) films using a unique microwave plasma technique that involves CH{sub 4}-Ar gas mixtures, as opposed to the conventional CH{sub 4}-H{submore »« less
Full Text Available

Similar Records

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Citation Formats

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications journal, January 2009

Flat panel display based on diamond thin films patent, September 1996

Thermionic electron emission from low work-function phosphorus doped diamond films journal, May 2009

Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition journal, August 2015

Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces journal, July 1998

Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth journal, November 2011

Thermionic cathode of high emissive power for an electric tube, and process for its manufacture patent, June 1988

Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same patent, December 2011

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same patent, November 2014

Method for making inversion mode diamond electron source patent, May 1997

Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure journal, August 2011

Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films journal, June 2014

Method of forming a boron-doped diamond film by chemical vapor deposition patent, June 1997

Semiconductor device and method for manufacturing the same patent, November 2014

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface journal, October 2007

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond journal, December 2014

Method for manufacture of field emission array patent, August 1999

CVD diamond—Research, applications, and challenges journal, June 2014

Phosphorus-doped chemical vapor deposition of diamond journal, April 2000

Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate journal, October 2014

Phosphorus incorporation in plasma deposited diamond films journal, February 1994

Synthesis of phosphorus-doped diamond patent, October 1999

Low work function diamond surface and radiation energy converters using same patent, December 2013

Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma journal, May 2009

n-Type CVD diamond: Epitaxy and doping journal, October 2011

Hybrid thermionic energy converter and method patent, December 2002

Photon-enhanced thermionic emission from heterostructures with low interface recombination journal, March 2013

Collector for thermionic energy converter covered with carbon like material and having a low electronic work function patent, November 1996

Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations patent, May 2012

System and method for producing synthetic diamond patent, June 2003

High-speed diamond growth using a microwave plasma in pulsed mode patent, February 2010

Low energy ion doping of growing diamond by CVD patent, August 1993

High performance isothermal photo-thermionic solar converters journal, June 2013

Impurity-to-band activation energy in phosphorus doped diamond journal, August 2013

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application journal, March 2016

Photon-enhanced thermionic emission for solar concentrator systems journal, August 2010

Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films journal, November 2011

Low work function materials for microminiature energy conversion and recovery applications patent, May 2003

Characterization of specific contact resistance on heavily phosphorus-doped diamond films journal, May 2009

Doped diamond thin film electron sources for thermionic energy conversion conference, July 2013

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films journal, February 2009

High uniformity boron doped diamond material patent, October 2012

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition journal, July 2013

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films journal, December 2012

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates journal, September 2014

P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm conference, June 2015

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications
journal, January 2009

Flat panel display based on diamond thin films
patent, September 1996

Thermionic electron emission from low work-function phosphorus doped diamond films
journal, May 2009

Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition
journal, August 2015

Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces
journal, July 1998

Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth
journal, November 2011

Thermionic cathode of high emissive power for an electric tube, and process for its manufacture
patent, June 1988

Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same
patent, December 2011

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
patent, November 2014

Method for making inversion mode diamond electron source
patent, May 1997

Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure
journal, August 2011

Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films
journal, June 2014

Method of forming a boron-doped diamond film by chemical vapor deposition
patent, June 1997

Semiconductor device and method for manufacturing the same
patent, November 2014

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface
journal, October 2007

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
journal, December 2014

Method for manufacture of field emission array
patent, August 1999

CVD diamond—Research, applications, and challenges
journal, June 2014

Phosphorus-doped chemical vapor deposition of diamond
journal, April 2000

Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate
journal, October 2014

Phosphorus incorporation in plasma deposited diamond films
journal, February 1994

Synthesis of phosphorus-doped diamond
patent, October 1999

Low work function diamond surface and radiation energy converters using same
patent, December 2013

Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma
journal, May 2009

n-Type CVD diamond: Epitaxy and doping
journal, October 2011

Hybrid thermionic energy converter and method
patent, December 2002

Photon-enhanced thermionic emission from heterostructures with low interface recombination
journal, March 2013

Collector for thermionic energy converter covered with carbon like material and having a low electronic work function
patent, November 1996

Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations
patent, May 2012

System and method for producing synthetic diamond
patent, June 2003

High-speed diamond growth using a microwave plasma in pulsed mode
patent, February 2010

Low energy ion doping of growing diamond by CVD
patent, August 1993

High performance isothermal photo-thermionic solar converters
journal, June 2013

Impurity-to-band activation energy in phosphorus doped diamond
journal, August 2013

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application
journal, March 2016

Photon-enhanced thermionic emission for solar concentrator systems
journal, August 2010

Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films
journal, November 2011

Low work function materials for microminiature energy conversion and recovery applications
patent, May 2003

Characterization of specific contact resistance on heavily phosphorus-doped diamond films
journal, May 2009

Doped diamond thin film electron sources for thermionic energy conversion
conference, July 2013

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films
journal, February 2009

High uniformity boron doped diamond material
patent, October 2012

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition
journal, July 2013

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films
journal, December 2012

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates
journal, September 2014

P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm
conference, June 2015