Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

Inventors:: Koeck, Franz A.; Chowdhury, Srabanti; Nemanich, Robert J.

Publication Date:: 2018-11-06

Research Org.:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1492817

Patent Number(s):: 10,121,657

Application Number:: 15/151,295

Assignee:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ)

DOE Contract Number:: AR0000453

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 May 10

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J.. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation.  United States: N. p., 2018. 
        Web.

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                    Koeck, Franz A., Chowdhury, Srabanti, & Nemanich, Robert J.. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation.  United States.

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                    Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J.. Tue .  
        "Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation".  United States.  https://www.osti.gov/servlets/purl/1492817.

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@article{osti_1492817,

  title        = {Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation},

  author       = {Koeck, Franz A. and Chowdhury, Srabanti and Nemanich, Robert J.},

  abstractNote = {Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1492817},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {11}

}

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Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Citation Formats

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Hybrid thermionic energy converter and method patent, December 2002

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System and method for producing synthetic diamond patent, June 2003

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Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition journal, July 2013

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films journal, December 2012

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates journal, September 2014

Process and apparatus for diamond synthesis patent-application, September 2009

P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm conference, June 2015

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications
journal, January 2009

Flat panel display based on diamond thin films
patent, September 1996

Thermionic electron emission from low work-function phosphorus doped diamond films
journal, May 2009

Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition
journal, August 2015

Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces
journal, July 1998

Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth
journal, November 2011

Thermionic cathode of high emissive power for an electric tube, and process for its manufacture
patent, June 1988

Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same
patent, December 2011

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
patent, November 2014

Method for making inversion mode diamond electron source
patent, May 1997

Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure
journal, August 2011

Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films
journal, June 2014

Method of forming a boron-doped diamond film by chemical vapor deposition
patent, June 1997

Semiconductor device and method for manufacturing the same
patent, November 2014

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface
journal, October 2007

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
journal, December 2014

Method for manufacture of field emission array
patent, August 1999

CVD diamond—Research, applications, and challenges
journal, June 2014

Phosphorus-doped chemical vapor deposition of diamond
journal, April 2000

Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate
journal, October 2014

Wear resistant vapor deposited coating, method of coating deposition and applications therefor
patent-application, December 2007

Phosphorus incorporation in plasma deposited diamond films
journal, February 1994

Synthesis of phosphorus-doped diamond
patent, October 1999

Low work function diamond surface and radiation energy converters using same
patent, December 2013

Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma
journal, May 2009

n-Type CVD diamond: Epitaxy and doping
journal, October 2011

Hybrid thermionic energy converter and method
patent, December 2002

Photon-enhanced thermionic emission from heterostructures with low interface recombination
journal, March 2013

Collector for thermionic energy converter covered with carbon like material and having a low electronic work function
patent, November 1996

Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations
patent, May 2012

System and method for producing synthetic diamond
patent, June 2003

High-speed diamond growth using a microwave plasma in pulsed mode
patent, February 2010

Low energy ion doping of growing diamond by CVD
patent, August 1993

High performance isothermal photo-thermionic solar converters
journal, June 2013

Impurity-to-band activation energy in phosphorus doped diamond
journal, August 2013

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application
journal, March 2016

Photon-enhanced thermionic emission for solar concentrator systems
journal, August 2010

Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films
journal, November 2011

Low work function materials for microminiature energy conversion and recovery applications
patent, May 2003

Characterization of specific contact resistance on heavily phosphorus-doped diamond films
journal, May 2009

Doped diamond thin film electron sources for thermionic energy conversion
conference, July 2013

Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films
journal, February 2009

High uniformity boron doped diamond material
patent, October 2012

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition
journal, July 2013

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films
journal, December 2012

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates
journal, September 2014

Process and apparatus for diamond synthesis
patent-application, September 2009

P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm
conference, June 2015