Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
Abstract
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.
- Inventors:
- Publication Date:
- Research Org.:
- ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1492817
- Patent Number(s):
- 10,121,657
- Application Number:
- 15/151,295
- Assignee:
- ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ)
- DOE Contract Number:
- AR0000453
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 May 10
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation. United States: N. p., 2018.
Web.
Koeck, Franz A., Chowdhury, Srabanti, & Nemanich, Robert J. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation. United States.
Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J. Tue .
"Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation". United States. https://www.osti.gov/servlets/purl/1492817.
@article{osti_1492817,
title = {Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation},
author = {Koeck, Franz A. and Chowdhury, Srabanti and Nemanich, Robert J.},
abstractNote = {Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.},
doi = {},
url = {https://www.osti.gov/biblio/1492817},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}
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