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Title: RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates

Abstract

Al-rich A1GaN-channel high electron mobility transistors (HEMTs) with 80 nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. DC characteristics include a maximum current of 160 mA/mm with transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 10 9. fT of 28.4 GlIz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1492356
Report Number(s):
SAND-2018-14045J
Journal ID: ISSN 0741-3106; 670962
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 40; Journal Issue: 1; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Ultra-wide-bandgap; aluminum gallium nitride; RF performance; high electron mobility transistor; HEMT

Citation Formats

Baca, Albert G., Klein, Brianna A., Wendt, Joel R., Lepkowski, Stefan M., Nordquist, Christopher D., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., and Kaplar, Robert J. RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates. United States: N. p., 2018. Web. doi:10.1109/LED.2018.2880429.
Baca, Albert G., Klein, Brianna A., Wendt, Joel R., Lepkowski, Stefan M., Nordquist, Christopher D., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., & Kaplar, Robert J. RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates. United States. doi:10.1109/LED.2018.2880429.
Baca, Albert G., Klein, Brianna A., Wendt, Joel R., Lepkowski, Stefan M., Nordquist, Christopher D., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., and Kaplar, Robert J. Mon . "RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates". United States. doi:10.1109/LED.2018.2880429.
@article{osti_1492356,
title = {RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates},
author = {Baca, Albert G. and Klein, Brianna A. and Wendt, Joel R. and Lepkowski, Stefan M. and Nordquist, Christopher D. and Armstrong, Andrew M. and Allerman, Andrew A. and Douglas, Erica A. and Kaplar, Robert J.},
abstractNote = {Al-rich A1GaN-channel high electron mobility transistors (HEMTs) with 80 nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. DC characteristics include a maximum current of 160 mA/mm with transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GlIz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.},
doi = {10.1109/LED.2018.2880429},
journal = {IEEE Electron Device Letters},
issn = {0741-3106},
number = 1,
volume = 40,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 12, 2019
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