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Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Abstract

A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Inventors:
; ; ;
Publication Date:
Research Org.:
Lehigh University, Bethleham, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1492025
Patent Number(s):
10,115,859
Application Number:
12/968,960
Assignee:
Lehigh University (Bethleham, PA)
DOE Contract Number:  
FC26-08NT01581
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 15
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States: N. p., 2018. Web.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Tue . "Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer". United States. https://www.osti.gov/servlets/purl/1492025.
@article{osti_1492025,
title = {Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer},
author = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Huang, Gensheng},
abstractNote = {A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Patent:

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Works referenced in this record:

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
journal, September 2010

  • Zhao, Hongping; Liu, Guangyu; Tansu, Nelson
  • Applied Physics Letters, Vol. 97, Issue 13
  • DOI: 10.1063/1.3493188

Optical gain characteristics of staggered InGaN quantum wells lasers
journal, June 2010

  • Zhao, Hongping; Tansu, Nelson
  • Journal of Applied Physics, Vol. 107, Issue 11, Article No. 113110
  • DOI: 10.1063/1.3407564

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
journal, July 2009

  • Zhao, H.; Arif, R. A.; Tansu, N.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4, p. 1104-1114
  • DOI: 10.1109/JSTQE.2009.2016576

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
journal, August 2007

  • Arif, Ronald A.; Ee, Yik-Khoon; Tansu, Nelson
  • Applied Physics Letters, Vol. 91, Issue 9
  • DOI: 10.1063/1.2775334

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
journal, June 2008

  • Arif, Ronald A.; Zhao, Hongping; Ee, Yik-Khoon
  • IEEE Journal of Quantum Electronics, Vol. 44, Issue 6, p. 573-580
  • DOI: 10.1109/JQE.2008.918309

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
journal, August 2009

  • Zhao, Hongping; Liu, Guangyu; Li, Xiao-Hang
  • Applied Physics Letters, Vol. 95, Issue 6
  • DOI: 10.1063/1.3204446

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
journal, December 2009


Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
journal, May 2006

  • Park, Jongwoon; Kawakami, Yoichi
  • Applied Physics Letters, Vol. 88, Issue 20, Article No. 202107
  • DOI: 10.1063/1.2205731

Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer
journal, January 2007

  • Park, Seoung-Hwan; Park, Jongwoon; Yoon, Euijoon
  • Applied Physics Letters, Vol. 90, Issue 2, Article No. 023508
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