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Title: Growth of single crystal III-V semiconductors on amorphous substrates

Abstract

This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.

Inventors:
; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1490732
Patent Number(s):
10,087,547
Application Number:
15/354,063
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Nov 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chen, Kevin, Kapadia, Rehan, and Javey, Ali. Growth of single crystal III-V semiconductors on amorphous substrates. United States: N. p., 2018. Web.
Chen, Kevin, Kapadia, Rehan, & Javey, Ali. Growth of single crystal III-V semiconductors on amorphous substrates. United States.
Chen, Kevin, Kapadia, Rehan, and Javey, Ali. Tue . "Growth of single crystal III-V semiconductors on amorphous substrates". United States. https://www.osti.gov/servlets/purl/1490732.
@article{osti_1490732,
title = {Growth of single crystal III-V semiconductors on amorphous substrates},
author = {Chen, Kevin and Kapadia, Rehan and Javey, Ali},
abstractNote = {This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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