Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system

Chen, Zhuoyu; Swartz, Adrian G.; Yoon, Hyeok; Inoue, Hisashi; Merz, Tyler A.; Lu, Di; Xie, Yanwu; Yuan, Hongtao; Hikita, Yasuyuki; Raghu, Srinivas; Hwang, Harold Y.

doi:10.1038/s41467-018-06444-2

Title: Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system

Journal Article · Mon Oct 01 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-06444-2· OSTI ID:1490640

^[1]; Swartz, Adrian G. ^[1]; Yoon, Hyeok ^[2]; Inoue, Hisashi ^[1]; Merz, Tyler A. ^[2]; Lu, Di ^[1]; Xie, Yanwu ^[1]; Yuan, Hongtao ^[1]; Hikita, Yasuyuki ^[1]; Raghu, Srinivas ^[1]; Hwang, Harold Y. ^[1]

Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., Stanford, CA (United States)

Quantum ground states that arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO₃/SrTiO₃ interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating and is accompanied with a pseudogap. Here we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a two-dimensional superconducting dome as a function of the dual-gate voltages. In conclusion, the gate-tuned superconductor–metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515; GBMF4415; DMR-1157490

OSTI ID:: 1490640

Journal Information:: Nature Communications, Vol. 9, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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Cited By (5)

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO ₃ ‐Based Heterointerfaces with External Stimuli Christensen, Dennis Valbjørn; Trier, Felix; Niu, Wei Advanced Materials Interfaces, Vol. 6, Issue 21 https://doi.org/10.1002/admi.201900772	journal	August 2019
Delta-doped SrTiO ₃ top-gated field effect transistor Inoue, Hisashi; Yoon, Hyeok; Merz, Tyler A. Applied Physics Letters, Vol. 114, Issue 23 https://doi.org/10.1063/1.5090269	journal	June 2019
Gate-tunable anomalous transverse voltage at the superconducting LaAlO ₃ /SrTiO ₃ interface Yan, Yuedong; Wei, Laiming; Guo, Linhai Applied Physics Letters, Vol. 115, Issue 6 https://doi.org/10.1063/1.5113584	journal	August 2019
Bimodal Phase Diagram of the Superfluid Density in ${LaAlO}_{3} / SrTi O_{3}$ Revealed by an Interfacial Waveguide Resonator Manca, Nicola; Bothner, Daniel; Monteiro, Ana M. R. V. L. Physical Review Letters, Vol. 122, Issue 3 https://doi.org/10.1103/physrevlett.122.036801	journal	January 2019
Intermediate bosonic metallic state in the superconductor-insulator transition Yang, Chao; Liu, Yi; Wang, Yang Science, Vol. 366, Issue 6472 https://doi.org/10.1126/science.aax5798	journal	November 2019

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