Epitaxial growth of TiSe2/TiO2 heterostructure

Jia, Tao; Rebec, Slavko N.; Tang, Shujie; Xu, Kejun; Sohail, Hafiz M.; Hashimoto, Makoto; Lu, Donghui; Moore, Robert G.; Shen, Zhi-Xun

doi:10.1088/2053-1583/aaeadf

Title: Epitaxial growth of TiSe₂/TiO₂ heterostructure

Journal Article · Wed Oct 24 00:00:00 EDT 2018 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/aaeadf· OSTI ID:1490419

^[1]; Rebec, Slavko N. ^[1]; Tang, Shujie ^[1]; Xu, Kejun ^[2]; Sohail, Hafiz M. ^[1]; Hashimoto, Makoto ^[3]; Lu, Donghui ^[3]; Moore, Robert G. ^[4]; Shen, Zhi-Xun ^[1]

SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials. Dept. of Physics. Dept. of Applied Physics
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials. Dept. of Physics. Dept. of Applied Physics
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

We report that TiSe₂ thin films can be epitaxially grown on TiO₂ substrates despite different lattice symmetry between the two materials. The TiSe₂ thin films can be prepared on TiO₂ via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO₂. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe₂ films on TiO₂ substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe₂ and TiSe₂ thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe₂ films, which naturally occur when these films are grown on TiO₂ substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1490419

Journal Information:: 2D Materials, Vol. 6, Issue 1; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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transition metal dichalcogenide (TMDC)
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Title: Epitaxial growth of TiSe2/TiO2 heterostructure

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Title: Epitaxial growth of TiSe₂/TiO₂ heterostructure