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Title: Epitaxial growth of TiSe 2/TiO 2 heterostructure

Abstract

We report that TiSe 2 thin films can be epitaxially grown on TiO 2 substrates despite different lattice symmetry between the two materials. The TiSe 2 thin films can be prepared on TiO 2 via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO 2. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe 2 films on TiO 2 substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe 2 and TiSe 2 thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe 2 films, which naturally occur when these films are grown on TiO 2 substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1];  [3];  [3];  [4];  [1]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials. Dept. of Physics. Dept. of Applied Physics
  2. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials. Dept. of Physics. Dept. of Applied Physics
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1490419
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
2D Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2053-1583
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; transition metal dichalcogenide (TMDC); molecular beam epitaxy (MBE); transition metal oxide (TMO); heterostructure

Citation Formats

Jia, Tao, Rebec, Slavko N., Tang, Shujie, Xu, Kejun, Sohail, Hafiz M., Hashimoto, Makoto, Lu, Donghui, Moore, Robert G., and Shen, Zhi-Xun. Epitaxial growth of TiSe2/TiO2 heterostructure. United States: N. p., 2018. Web. doi:10.1088/2053-1583/aaeadf.
Jia, Tao, Rebec, Slavko N., Tang, Shujie, Xu, Kejun, Sohail, Hafiz M., Hashimoto, Makoto, Lu, Donghui, Moore, Robert G., & Shen, Zhi-Xun. Epitaxial growth of TiSe2/TiO2 heterostructure. United States. doi:10.1088/2053-1583/aaeadf.
Jia, Tao, Rebec, Slavko N., Tang, Shujie, Xu, Kejun, Sohail, Hafiz M., Hashimoto, Makoto, Lu, Donghui, Moore, Robert G., and Shen, Zhi-Xun. Wed . "Epitaxial growth of TiSe2/TiO2 heterostructure". United States. doi:10.1088/2053-1583/aaeadf.
@article{osti_1490419,
title = {Epitaxial growth of TiSe2/TiO2 heterostructure},
author = {Jia, Tao and Rebec, Slavko N. and Tang, Shujie and Xu, Kejun and Sohail, Hafiz M. and Hashimoto, Makoto and Lu, Donghui and Moore, Robert G. and Shen, Zhi-Xun},
abstractNote = {We report that TiSe2 thin films can be epitaxially grown on TiO2 substrates despite different lattice symmetry between the two materials. The TiSe2 thin films can be prepared on TiO2 via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO2. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe2 films on TiO2 substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe2 and TiSe2 thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe2 films, which naturally occur when these films are grown on TiO2 substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.},
doi = {10.1088/2053-1583/aaeadf},
journal = {2D Materials},
issn = {2053-1583},
number = 1,
volume = 6,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 24, 2019
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