Engineering SrSnO3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Wang, Tianqi; Prakash, Abhinav; Dong, Yongqi; Truttmann, Tristan; Bucsek, Ashley; James, Richard; Fong, Dillon D.; Kim, Jong -Woo; Ryan, Philip J.; Zhou, Hua; Birol, Turan; Jalan, Bharat

doi:10.1021/acsami.8b16592

Title: Engineering SrSnO₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Journal Article · Tue Nov 20 00:00:00 EST 2018 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.8b16592· OSTI ID:1490092

Wang, Tianqi ^[1];

^[1]; Dong, Yongqi ^[2]; Truttmann, Tristan ^[1]; Bucsek, Ashley ^[1]; James, Richard ^[1]; Fong, Dillon D. ^[3]; Kim, Jong -Woo ^[3]; Ryan, Philip J. ^[3]; Zhou, Hua ^[3]; Birol, Turan ^[1];

^[1]

Univ. of Minnesota, Minneapolis, MN (United States)
Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Science and Technology of China, Anhui (China)
Argonne National Lab. (ANL), Argonne, IL (United States)

High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature (RT). Alkaline-earth stannates with high RT mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations because of the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO₃ (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at RT, which, in bulk, exists only at temperatures between 1062 and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low-temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport, and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. Furthermore, we argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1490092

Journal Information:: ACS Applied Materials and Interfaces, Vol. 10, Issue 50; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 28 works

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References (27)

High carrier mobility in transparent Ba _1−x La _x SnO ₃ crystals with a wide band gap Luo, X.; Oh, Y. S.; Sirenko, A. Applied Physics Letters, Vol. 100, Issue 17 https://doi.org/10.1063/1.4709415	journal	April 2012
Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO ₃ Prakash, Abhinav; Dewey, John; Yun, Hwanhui Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 6 https://doi.org/10.1116/1.4933401	journal	November 2015
Alkaline earth stannates: The next silicon? Ismail-Beigi, Sohrab; Walker, Frederick J.; Cheong, Sang-Wook APL Materials, Vol. 3, Issue 6 https://doi.org/10.1063/1.4921338	journal	June 2015
Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1 Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15167	journal	May 2017
Quantifying octahedral rotations in strained perovskite oxide films May, S. J.; Kim, J. -W.; Rondinelli, J. M. Physical Review B, Vol. 82, Issue 1 https://doi.org/10.1103/physrevb.82.014110	journal	July 2010
Optical and transport properties of transparent conducting La-doped SrSnO ₃ thin films Baba, Erina; Kan, Daisuke; Yamada, Yasuhiro Journal of Physics D: Applied Physics, Vol. 48, Issue 45 https://doi.org/10.1088/0022-3727/48/45/455106	journal	October 2015
First-principles study of structural, elastic, electronic and optical properties of SrMO3 (M=Ti and Sn) Ghebouli, B.; Ghebouli, M. A.; Chihi, T. Solid State Communications, Vol. 149, Issue 47-48 https://doi.org/10.1016/j.ssc.2009.09.001	journal	December 2009
Probing the Electronic Structures of Ternary Perovskite and Pyrochlore Oxides Containing Sn ⁴⁺ or Sb ⁵⁺ Mizoguchi, Hiroshi; Eng, Hank W.; Woodward, Patrick M. Inorganic Chemistry, Vol. 43, Issue 5 https://doi.org/10.1021/ic034551c	journal	March 2004
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors Lee, Minjoo L.; Fitzgerald, Eugene A.; Bulsara, Mayank T. Journal of Applied Physics, Vol. 97, Issue 1 https://doi.org/10.1063/1.1819976	journal	January 2005
High temperature structural phase transitions in SrSnO3 perovskite Glerup, Marianne; Knight, Kevin S.; Poulsen, Finn Willy Materials Research Bulletin, Vol. 40, Issue 3 https://doi.org/10.1016/j.materresbull.2004.11.004	journal	March 2005
Adsorption-controlled growth of La-doped BaSnO ₃ by molecular-beam epitaxy Paik, Hanjong; Chen, Zhen; Lochocki, Edward APL Materials, Vol. 5, Issue 11 https://doi.org/10.1063/1.5001839	journal	November 2017
Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates Lee, Minjoo L.; Leitz, C. W.; Cheng, Z. Applied Physics Letters, Vol. 79, Issue 20 https://doi.org/10.1063/1.1417515	journal	November 2001
Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO ₃ Ganguly, Koustav; Prakash, Abhinav; Jalan, Bharat APL Materials, Vol. 5, Issue 5 https://doi.org/10.1063/1.4983039	journal	May 2017
High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition Höck, G.; Kohn, E.; Rosenblad, C. Applied Physics Letters, Vol. 76, Issue 26 https://doi.org/10.1063/1.126821	journal	June 2000
Enhancing the electron mobility of SrTiO3 with strain Jalan, Bharat; Allen, S. James; Beltz, Glenn E. Applied Physics Letters, Vol. 98, Issue 13 https://doi.org/10.1063/1.3571447	journal	March 2011
Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions Chambers, Scott A.; Kaspar, Tiffany C.; Prakash, Abhinav Applied Physics Letters, Vol. 108, Issue 15 https://doi.org/10.1063/1.4946762	journal	April 2016
Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO ₃ Epitaxial Films Gao, Qiang; Chen, Hengli; Li, Kaifeng ACS Applied Materials & Interfaces, Vol. 10, Issue 32 https://doi.org/10.1021/acsami.8b08508	journal	July 2018
Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy Schumann, Timo; Raghavan, Santosh; Ahadi, Kaveh Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 5 https://doi.org/10.1116/1.4959004	journal	July 2016
Transparent conducting properties of SrSnO ₃ and ZnSnO ₃ Ong, Khuong P.; Fan, Xiaofeng; Subedi, Alaska APL Materials, Vol. 3, Issue 6 https://doi.org/10.1063/1.4919564	journal	June 2015
High-mobility BaSnO ₃ grown by oxide molecular beam epitaxy Raghavan, Santosh; Schumann, Timo; Kim, Honggyu APL Materials, Vol. 4, Issue 1 https://doi.org/10.1063/1.4939657	journal	January 2016
Octahedral Tilting in Perovskites. II. Structure Stabilizing Forces Woodward, P. M. Acta Crystallographica Section B Structural Science, Vol. 53, Issue 1 https://doi.org/10.1107/s0108768196012050	journal	February 1997
Strain effects on the band gap and optical properties of perovskite SrSnO ₃ and BaSnO ₃ Singh, David J.; Xu, Qiang; Ong, Khuong P. Applied Physics Letters, Vol. 104, Issue 1 https://doi.org/10.1063/1.4861838	journal	January 2014
Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO ₃ Gao, Ran; Dong, Yongqi; Xu, Han ACS Applied Materials & Interfaces, Vol. 8, Issue 23 https://doi.org/10.1021/acsami.6b02864	journal	June 2016
A theory of thin films of martensitic materials withapplications to microactuatorsfn2fn2Dedicated to thememory of Juan Simo. Bhattacharya, K.; James, R. D. Journal of the Mechanics and Physics of Solids, Vol. 47, Issue 3 https://doi.org/10.1016/s0022-5096(98)00043-x	journal	March 1999
Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1−xGex Lee, Minjoo L.; Fitzgerald, Eugene A. Journal of Applied Physics, Vol. 94, Issue 4 https://doi.org/10.1063/1.1590052	journal	August 2003
THz characterization and demonstration of visible-transparent/terahertz-functional electromagnetic structures in ultra-conductive La-doped BaSnO3 Films Arezoomandan, Sara; Prakash, Abhinav; Chanana, Ashish Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-22038-w	journal	February 2018
NMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structures Proceedings of IEEE International Electron Devices Meeting, International Technical Digest on Electron Devices Meeting https://doi.org/10.1109/IEDM.1992.307527	conference	January 1992

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Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO ₃ films Yue, Jin; Thoutam, Laxman R.; Prakash, Abhinav Applied Physics Letters, Vol. 115, Issue 8 https://doi.org/10.1063/1.5113522	journal	August 2019
Conductive Oxide Interfaces for Field Effect Devices Kornblum, Lior Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900480	journal	June 2019
Designing novel perovskite-type strontium stannate (SrSnO 3 ) and its potential as an electrode material for the enhanced sensing of anti-inflammatory drug mesalamine in biological samples Muthukutty, Balamurugan; Karthik, Raj; Chen, Shen-Ming New Journal of Chemistry, Vol. 43, Issue 31 https://doi.org/10.1039/c9nj02197c	journal	January 2019
Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films Truttmann, Tristan; Prakash, Abhinav; Yue, Jin arXiv https://doi.org/10.48550/arxiv.1907.04496	text	January 2019
Strain Tuning of Plasma Frequency in Vanadate, Niobate, and Molybdate Perovskite Oxides Paul, Arpita; Birol, Turan arXiv https://doi.org/10.48550/arxiv.1907.09860	text	January 2019
Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility Prakash, Abhinav; Jalan, Bharat Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900479	journal	June 2019
Dopant solubility and charge compensation in La-doped SrSnO ₃ films Truttmann, Tristan; Prakash, Abhinav; Yue, Jin Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5119272	journal	October 2019

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