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Title: Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Abstract

High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature (RT). Alkaline-earth stannates with high RT mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations because of the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO 3 (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at RT, which, in bulk, exists only at temperatures between 1062 and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low-temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport, and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. Furthermore, we argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.

Authors:
 [1]; ORCiD logo [1];  [2];  [1];  [1];  [1];  [3];  [3];  [3];  [3];  [1]; ORCiD logo [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Science and Technology of China, Anhui (China)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); USDOE
OSTI Identifier:
1490092
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 10; Journal Issue: 50; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; density functional theory; half-order diffraction; high mobility; hybrid molecular beam epitaxy; octahedral rotations; phase transition; strain engineering

Citation Formats

Wang, Tianqi, Prakash, Abhinav, Dong, Yongqi, Truttmann, Tristan, Bucsek, Ashley, James, Richard, Fong, Dillon D., Kim, Jong -Woo, Ryan, Philip J., Zhou, Hua, Birol, Turan, and Jalan, Bharat. Engineering SrSnO3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain. United States: N. p., 2018. Web. doi:10.1021/acsami.8b16592.
Wang, Tianqi, Prakash, Abhinav, Dong, Yongqi, Truttmann, Tristan, Bucsek, Ashley, James, Richard, Fong, Dillon D., Kim, Jong -Woo, Ryan, Philip J., Zhou, Hua, Birol, Turan, & Jalan, Bharat. Engineering SrSnO3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain. United States. doi:10.1021/acsami.8b16592.
Wang, Tianqi, Prakash, Abhinav, Dong, Yongqi, Truttmann, Tristan, Bucsek, Ashley, James, Richard, Fong, Dillon D., Kim, Jong -Woo, Ryan, Philip J., Zhou, Hua, Birol, Turan, and Jalan, Bharat. Tue . "Engineering SrSnO3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain". United States. doi:10.1021/acsami.8b16592.
@article{osti_1490092,
title = {Engineering SrSnO3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain},
author = {Wang, Tianqi and Prakash, Abhinav and Dong, Yongqi and Truttmann, Tristan and Bucsek, Ashley and James, Richard and Fong, Dillon D. and Kim, Jong -Woo and Ryan, Philip J. and Zhou, Hua and Birol, Turan and Jalan, Bharat},
abstractNote = {High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature (RT). Alkaline-earth stannates with high RT mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations because of the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO3 (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at RT, which, in bulk, exists only at temperatures between 1062 and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low-temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport, and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. Furthermore, we argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.},
doi = {10.1021/acsami.8b16592},
journal = {ACS Applied Materials and Interfaces},
issn = {1944-8244},
number = 50,
volume = 10,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 20, 2019
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