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Title: Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1489425
Grant/Contract Number:  
AC02-05-CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 122 Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chittari, Bheema Lingam, Chen, Guorui, Zhang, Yuanbo, Wang, Feng, and Jung, Jeil. Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.122.016401.
Chittari, Bheema Lingam, Chen, Guorui, Zhang, Yuanbo, Wang, Feng, & Jung, Jeil. Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices. United States. doi:10.1103/PhysRevLett.122.016401.
Chittari, Bheema Lingam, Chen, Guorui, Zhang, Yuanbo, Wang, Feng, and Jung, Jeil. Thu . "Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices". United States. doi:10.1103/PhysRevLett.122.016401.
@article{osti_1489425,
title = {Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices},
author = {Chittari, Bheema Lingam and Chen, Guorui and Zhang, Yuanbo and Wang, Feng and Jung, Jeil},
abstractNote = {},
doi = {10.1103/PhysRevLett.122.016401},
journal = {Physical Review Letters},
number = 1,
volume = 122,
place = {United States},
year = {Thu Jan 03 00:00:00 EST 2019},
month = {Thu Jan 03 00:00:00 EST 2019}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 3, 2020
Publisher's Accepted Manuscript

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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010