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Title: A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk

Abstract

We present a new kind of silicon device: a High-Voltage vertical JFET, initially conceived as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon microstrip Inner Tracker (ITk). It is based on a vertical structure, with the drain being the epitaxial layer. Both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Laboratory. Probe station measurements of un-irradiated devices show low leakage currents and high breakdown voltages (up to 600V) in the OFF state, and high currents in the ON state, which satisfy the requirements for the switch, at least before irradiation. Proton and neutron irradiation are planned to test the suitability of this device at the radiation levels foreseen in the ITk.

Authors:
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1489346
Report Number(s):
BNL-210824-2018-COPA
DOE Contract Number:  
SC0012704
Resource Type:
Conference
Resource Relation:
Conference: IEEE 2018 Nuclear Science Symposium and Medical Imaging Conference, Sydney, Australia, 11/10/2018 - 11/17/2018
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Giacomini, Gabriele. A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk. United States: N. p., 2018. Web.
Giacomini, Gabriele. A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk. United States.
Giacomini, Gabriele. Sat . "A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk". United States.
@article{osti_1489346,
title = {A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk},
author = {Giacomini, Gabriele},
abstractNote = {We present a new kind of silicon device: a High-Voltage vertical JFET, initially conceived as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon microstrip Inner Tracker (ITk). It is based on a vertical structure, with the drain being the epitaxial layer. Both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Laboratory. Probe station measurements of un-irradiated devices show low leakage currents and high breakdown voltages (up to 600V) in the OFF state, and high currents in the ON state, which satisfy the requirements for the switch, at least before irradiation. Proton and neutron irradiation are planned to test the suitability of this device at the radiation levels foreseen in the ITk.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

Conference:
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