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Title: High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Abstract

Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the < 11$$ \overline{20}\ $$ > and < 110 > directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ~29% at room temperature along with intrinsic and extrinsic defect energy levels of ~124 and ~344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Altogether, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [1]
  1. Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States); Micro and Nanotechnology Technology Lab., Urbana, IL (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Illinois at Urbana−Champaign, Urbana, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Aeronautic and Space Administration (NASA); Univ. of Illinois – Urbana-Champaign; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1489243
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 5; Journal Issue: 3; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; cathodoluminescence; cubic phase; electron backscatter diffraction; gallium nitride; photoluminescence; ultraviolet emitter

Citation Formats

Liu, Richard, Schaller, Richard, Chen, Chang Qiang, and Bayram, Can. High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). United States: N. p., 2018. Web. doi:10.1021/acsphotonics.7b01231.
Liu, Richard, Schaller, Richard, Chen, Chang Qiang, & Bayram, Can. High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). United States. doi:10.1021/acsphotonics.7b01231.
Liu, Richard, Schaller, Richard, Chen, Chang Qiang, and Bayram, Can. Mon . "High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)". United States. doi:10.1021/acsphotonics.7b01231. https://www.osti.gov/servlets/purl/1489243.
@article{osti_1489243,
title = {High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)},
author = {Liu, Richard and Schaller, Richard and Chen, Chang Qiang and Bayram, Can},
abstractNote = {Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the < 11$ \overline{20}\ $ > and < 110 > directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ~29% at room temperature along with intrinsic and extrinsic defect energy levels of ~124 and ~344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Altogether, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.},
doi = {10.1021/acsphotonics.7b01231},
journal = {ACS Photonics},
issn = {2330-4022},
number = 3,
volume = 5,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
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Cited by: 5 works
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Figures / Tables:

Figure 1 Figure 1: Phase-transition GaN drawings (a, c, e) and SEMs (b, d, f) under various conditions. In (a) and (b), the U-groove is optimized ($h=h_c$), enabling complete c-GaN (blue) surface coverage. In (c) and (d), the U-groove is under-deposited ($h < h_c$) leading to a dual-phase surface of c-GaN (blue)more » flanked by h-GaN ($10\bar{1}1$) planes (red). In (e) and (f), the U-groove is over-deposited ($h > h_c$), resulting in a defective, mixed phase material (purple).« less

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