Direct observation of the layer-dependent electronic structure in phosphorene

Li, Likai; Kim, Jonghwan; Jin, Chenhao; Ye, Guo Jun; Qiu, Diana Y.; da Jornada, Felipe H.; Shi, Zhiwen; Chen, Long; Zhang, Zuocheng; Yang, Fangyuan; Watanabe, Kenji; Taniguchi, Takashi; Ren, Wencai; Louie, Steven G.; Chen, Xian Hui; Zhang, Yuanbo; Wang, Feng

doi:10.1038/NNANO.2016.171

Title: Direct observation of the layer-dependent electronic structure in phosphorene

Journal Article · Mon Sep 19 00:00:00 EDT 2016 · Nature Nanotechnology

DOI:https://doi.org/10.1038/NNANO.2016.171· OSTI ID:1489158

^[1]; Kim, Jonghwan ^[2]; Jin, Chenhao ^[2]; Ye, Guo Jun ^[3]; Qiu, Diana Y. ^[4]; da Jornada, Felipe H. ^[4]; Shi, Zhiwen ^[2]; Chen, Long ^[5]; Zhang, Zuocheng ^[1]; Yang, Fangyuan ^[1];

^[6]; Taniguchi, Takashi ^[6]; Ren, Wencai ^[5]; Louie, Steven G. ^[4]; Chen, Xian Hui ^[3]; Zhang, Yuanbo ^[1]; Wang, Feng ^[7]

Fudan Univ., Shanghai (China). State Key Lab. of Surface Physics and Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
Univ. of California, Berkeley, CA (United States). Dept. of Physics
Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale, Dept. of Physics, and Key Lab. of Strongly Coupled Quantum Matter Physics
Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Chinese Academy of Sciences (CAS), Beijing (China). Shenyang National Lab. for Materials Science, Inst. of Metal Research
National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division and Kavli Energy NanoSciences Inst.

Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies. Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC02-05CH11231

OSTI ID:: 1489158

Journal Information:: Nature Nanotechnology, Vol. 12, Issue 1; ISSN 1748-3387

Country of Publication:: United States

Language:: English

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