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Title: III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Abstract

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1488632
Grant/Contract Number:  
15/CJ000/07/05; 30290
Resource Type:
Journal Article: Published Article
Journal Name:
Crystals
Additional Journal Information:
Journal Name: Crystals Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2073-4352
Publisher:
MDPI AG
Country of Publication:
Germany
Language:
English

Citation Formats

Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, and Ptak, Aaron. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Germany: N. p., 2018. Web. doi:10.3390/cryst9010003.
Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, & Ptak, Aaron. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Germany. doi:10.3390/cryst9010003.
Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, and Ptak, Aaron. Thu . "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy". Germany. doi:10.3390/cryst9010003.
@article{osti_1488632,
title = {III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy},
author = {Simon, John and Schulte, Kevin and Horowitz, Kelsey and Remo, Timothy and Young, David and Ptak, Aaron},
abstractNote = {Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.},
doi = {10.3390/cryst9010003},
journal = {Crystals},
number = 1,
volume = 9,
place = {Germany},
year = {Thu Dec 20 00:00:00 EST 2018},
month = {Thu Dec 20 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.3390/cryst9010003

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Works referenced in this record:

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