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Title: Atomic layer deposition of titanium nitride for quantum circuits

Abstract

Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9–110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.2 to 1.0 × 10 6 and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kΩ, with no significant degradation of the internal quality factor as the impedance increases. In conclusion, these high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ω resonator, transformative for hybrid quantum systems and quantum sensing.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1];  [2]; ORCiD logo [3]; ORCiD logo [1];  [1]
  1. Univ. of Chicago, Chicago, IL (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
  3. Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO)
OSTI Identifier:
1488382
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Shearrow, Abigail, Koolstra, Gerwin, Whiteley, Samuel J., Earnest, Nathan, Barry, Peter S., Heremans, F. Joseph, Awschalom, David D., Shirokoff, Erik, and Schuster, David I. Atomic layer deposition of titanium nitride for quantum circuits. United States: N. p., 2018. Web. doi:10.1063/1.5053461.
Shearrow, Abigail, Koolstra, Gerwin, Whiteley, Samuel J., Earnest, Nathan, Barry, Peter S., Heremans, F. Joseph, Awschalom, David D., Shirokoff, Erik, & Schuster, David I. Atomic layer deposition of titanium nitride for quantum circuits. United States. doi:10.1063/1.5053461.
Shearrow, Abigail, Koolstra, Gerwin, Whiteley, Samuel J., Earnest, Nathan, Barry, Peter S., Heremans, F. Joseph, Awschalom, David D., Shirokoff, Erik, and Schuster, David I. Mon . "Atomic layer deposition of titanium nitride for quantum circuits". United States. doi:10.1063/1.5053461.
@article{osti_1488382,
title = {Atomic layer deposition of titanium nitride for quantum circuits},
author = {Shearrow, Abigail and Koolstra, Gerwin and Whiteley, Samuel J. and Earnest, Nathan and Barry, Peter S. and Heremans, F. Joseph and Awschalom, David D. and Shirokoff, Erik and Schuster, David I.},
abstractNote = {Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9–110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.2 to 1.0 × 106 and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kΩ, with no significant degradation of the internal quality factor as the impedance increases. In conclusion, these high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ω resonator, transformative for hybrid quantum systems and quantum sensing.},
doi = {10.1063/1.5053461},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 113,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 19, 2019
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