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Title: Atomically Abrupt Topological p–n Junction

Abstract

Topological insulators (TI’s) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p–n junctions. Interesting electronic properties of a ‘topological’ p–n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p–n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p–n junction of topological surface states (TSS’s) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS’s as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic andmore » spintronic devices based on well-defined topological p–n junctions with the scalability down to atomic dimensions.« less

Authors:
 [1];  [2];  [3];  [4]; ORCiD logo [5];  [3]; ORCiD logo [1]
  1. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
  2. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
  3. Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Physics
  4. Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Pohang Accelerator Lab.
  5. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory-National Energy Research Scientific Computing Center
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1487451
DOE Contract Number:  
FG02-04ER46148
Resource Type:
Journal Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 11; Journal Issue: 10; Journal ID: ISSN 1936-0851
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Sung Hwan, Jin, Kyung-Hwan, Kho, Byung Woo, Park, Byeong-Gyu, Liu, Feng, Kim, Jun Sung, and Yeom, Han Woong. Atomically Abrupt Topological p–n Junction. United States: N. p., 2017. Web. doi:10.1021/acsnano.7b03880.
Kim, Sung Hwan, Jin, Kyung-Hwan, Kho, Byung Woo, Park, Byeong-Gyu, Liu, Feng, Kim, Jun Sung, & Yeom, Han Woong. Atomically Abrupt Topological p–n Junction. United States. doi:10.1021/acsnano.7b03880.
Kim, Sung Hwan, Jin, Kyung-Hwan, Kho, Byung Woo, Park, Byeong-Gyu, Liu, Feng, Kim, Jun Sung, and Yeom, Han Woong. Thu . "Atomically Abrupt Topological p–n Junction". United States. doi:10.1021/acsnano.7b03880.
@article{osti_1487451,
title = {Atomically Abrupt Topological p–n Junction},
author = {Kim, Sung Hwan and Jin, Kyung-Hwan and Kho, Byung Woo and Park, Byeong-Gyu and Liu, Feng and Kim, Jun Sung and Yeom, Han Woong},
abstractNote = {Topological insulators (TI’s) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p–n junctions. Interesting electronic properties of a ‘topological’ p–n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p–n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p–n junction of topological surface states (TSS’s) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS’s as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well-defined topological p–n junctions with the scalability down to atomic dimensions.},
doi = {10.1021/acsnano.7b03880},
journal = {ACS Nano},
issn = {1936-0851},
number = 10,
volume = 11,
place = {United States},
year = {2017},
month = {8}
}