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Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Abstract

Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2];  [2];  [3];  [2]; ORCiD logo [1]
  1. Boston Univ., Boston, MA (United States)
  2. Univ. of Wisconsin-Madison, Madison, WI (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1487417
Report Number(s):
SAND-2018-10086J
Journal ID: ISSN 0003-6951; 667877
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes. United States: N. p., 2018. Web. doi:10.1063/1.5055869.
Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., & Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes. United States. doi:10.1063/1.5055869.
Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Mon . "Ultrawide strain-tuning of light emission from InGaAs nanomembranes". United States. doi:10.1063/1.5055869.
@article{osti_1487417,
title = {Ultrawide strain-tuning of light emission from InGaAs nanomembranes},
author = {Wang, Xiaowei and Cui, Xiaorui and Bhat, Abhishek and Savage, Donald E. and Reno, John L. and Lagally, Max G. and Paiella, Roberto},
abstractNote = {Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.},
doi = {10.1063/1.5055869},
journal = {Applied Physics Letters},
number = 20,
volume = 113,
place = {United States},
year = {Mon Nov 12 00:00:00 EST 2018},
month = {Mon Nov 12 00:00:00 EST 2018}
}

Journal Article:
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Works referenced in this record:

Strained-Germanium Nanostructures for Infrared Photonics
journal, March 2014

  • Boztug, Cicek; S�nchez-P�rez, Jos� R.; Cavallo, Francesca
  • ACS Nano, Vol. 8, Issue 4, p. 3136-3151
  • DOI: 10.1021/nn404739b

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
journal, November 2011

  • Sanchez-Perez, J. R.; Boztug, C.; Chen, F.
  • Proceedings of the National Academy of Sciences, Vol. 108, Issue 47, p. 18893-18898
  • DOI: 10.1073/pnas.1107968108

Elastically relaxed free-standing strained-silicon nanomembranes
journal, April 2006

  • Roberts, Michelle M.; Klein, Levente J.; Savage, Donald E.
  • Nature Materials, Vol. 5, Issue 5, p. 388-393
  • DOI: 10.1038/nmat1606

Stretchable and Foldable Silicon Integrated Circuits
journal, April 2008