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Title: Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE

Abstract

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm 2 and low specific resistivity of 1.46 x 10 -4 Ω∙cm 2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1487332
Report Number(s):
NREL/JA-5K00-72972
Journal ID: ISSN 0021-4922
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 57; Journal Issue: 12; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; gallium arsenide; III-V semiconductors; semiconducting gallium; tunnel diodes

Citation Formats

Kang, Seokjin, Ju, Gun Wu, Min, Jung-Wook, Lee, Dong-Seon, Lee, Yong Tak, Kim, Hyo Jin, and Park, Kwangwook. Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE. United States: N. p., 2018. Web. doi:10.7567/JJAP.57.120306.
Kang, Seokjin, Ju, Gun Wu, Min, Jung-Wook, Lee, Dong-Seon, Lee, Yong Tak, Kim, Hyo Jin, & Park, Kwangwook. Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE. United States. doi:10.7567/JJAP.57.120306.
Kang, Seokjin, Ju, Gun Wu, Min, Jung-Wook, Lee, Dong-Seon, Lee, Yong Tak, Kim, Hyo Jin, and Park, Kwangwook. Tue . "Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE". United States. doi:10.7567/JJAP.57.120306.
@article{osti_1487332,
title = {Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE},
author = {Kang, Seokjin and Ju, Gun Wu and Min, Jung-Wook and Lee, Dong-Seon and Lee, Yong Tak and Kim, Hyo Jin and Park, Kwangwook},
abstractNote = {High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 x 10-4 Ω∙cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.},
doi = {10.7567/JJAP.57.120306},
journal = {Japanese Journal of Applied Physics},
issn = {0021-4922},
number = 12,
volume = 57,
place = {United States},
year = {2018},
month = {10}
}