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Title: Surfactant-induced chemical ordering of GaAsN:Bi

Abstract

In this study, we have examined the influence of an incorporating surfactant on chemical ordering in GaAsN:Bi alloys. Epitaxy with a (2 x 1) reconstruction leads to the formation of GaAsN alloys, while the introduction of a Bi flux induces long-range chemical ordering of the {111} planes of GaAsN:Bi. We propose a mechanism in which Bi enhances the alignment of dimer rows along the [110] direction, facilitating N incorporation beneath surface dimers and Bi incorporation between dimer rows to form alternating N-rich and Bi-rich {111} planes. In conclusion, these findings suggest a route to tailoring the local atomic environment of N and Bi atoms in a wide range of emerging dilute nitride-bismide alloys.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); USDOE Office of Science (SC), Graduate Student Research Program
OSTI Identifier:
1487329
Report Number(s):
NREL/JA-5K00-72462
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; dilute III-nitride bismide alloys; chemical ordering; III-V semiconductors

Citation Formats

Occena, J., Jen, T., Lu, H., Carter, B. A., Jimson, T. S., Norman, A. G., and Goldman, R. S. Surfactant-induced chemical ordering of GaAsN:Bi. United States: N. p., 2018. Web. doi:10.1063/1.5045606.
Occena, J., Jen, T., Lu, H., Carter, B. A., Jimson, T. S., Norman, A. G., & Goldman, R. S. Surfactant-induced chemical ordering of GaAsN:Bi. United States. doi:10.1063/1.5045606.
Occena, J., Jen, T., Lu, H., Carter, B. A., Jimson, T. S., Norman, A. G., and Goldman, R. S. Tue . "Surfactant-induced chemical ordering of GaAsN:Bi". United States. doi:10.1063/1.5045606.
@article{osti_1487329,
title = {Surfactant-induced chemical ordering of GaAsN:Bi},
author = {Occena, J. and Jen, T. and Lu, H. and Carter, B. A. and Jimson, T. S. and Norman, A. G. and Goldman, R. S.},
abstractNote = {In this study, we have examined the influence of an incorporating surfactant on chemical ordering in GaAsN:Bi alloys. Epitaxy with a (2 x 1) reconstruction leads to the formation of GaAsN alloys, while the introduction of a Bi flux induces long-range chemical ordering of the {111} planes of GaAsN:Bi. We propose a mechanism in which Bi enhances the alignment of dimer rows along the [110] direction, facilitating N incorporation beneath surface dimers and Bi incorporation between dimer rows to form alternating N-rich and Bi-rich {111} planes. In conclusion, these findings suggest a route to tailoring the local atomic environment of N and Bi atoms in a wide range of emerging dilute nitride-bismide alloys.},
doi = {10.1063/1.5045606},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 113,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 20, 2019
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