Surfactant-induced chemical ordering of GaAsN:Bi

Occena, J.; Jen, T.; Lu, H.; Carter, B. A.; Jimson, T. S.; Norman, A. G.; Goldman, R. S.

doi:10.1063/1.5045606

Title: Surfactant-induced chemical ordering of GaAsN:Bi

Journal Article · Tue Nov 20 00:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5045606· OSTI ID:1487329

Occena, J. ^[1]; Jen, T. ^[1]; Lu, H. ^[1]; Carter, B. A. ^[1]; Jimson, T. S. ^[1]; Norman, A. G. ^[2]; Goldman, R. S. ^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

In this study, we have examined the influence of an incorporating surfactant on chemical ordering in GaAsN:Bi alloys. Epitaxy with a (2 x 1) reconstruction leads to the formation of GaAsN alloys, while the introduction of a Bi flux induces long-range chemical ordering of the {111} planes of GaAsN:Bi. We propose a mechanism in which Bi enhances the alignment of dimer rows along the [110] direction, facilitating N incorporation beneath surface dimers and Bi incorporation between dimer rows to form alternating N-rich and Bi-rich {111} planes. In conclusion, these findings suggest a route to tailoring the local atomic environment of N and Bi atoms in a wide range of emerging dilute nitride-bismide alloys.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Graduate Student Research Program

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1487329

Report Number(s):: NREL/JA-5K00-72462

Journal Information:: Applied Physics Letters, Vol. 113, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys Occena, J.; Jen, T.; Mitchell, J. W. Applied Physics Letters, Vol. 115, Issue 8 https://doi.org/10.1063/1.5057424	journal	August 2019
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers Luna, E.; Wu, M.; Aoki, T. Journal of Applied Physics, Vol. 126, Issue 8 https://doi.org/10.1063/1.5111532	journal	August 2019
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys Paulauskas, Tadas; Pačebutas, Vaidas; Butkutė, Renata Nanoscale Research Letters, Vol. 15, Issue 1 https://doi.org/10.1186/s11671-020-03349-2	journal	May 2020
GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization Paulauskas, Tadas; Pačebutas, Vaidas; Geižutis, Andrejus Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-58812-y	journal	February 2020

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