A HV silicon vertical JFET: TCAD simulations

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

DOI:https://doi.org/10.1016/j.nima.2018.12.046· OSTI ID:1487243

Giacomini, Gabriele ^[1]; Chen, Wei ^[1]; Lynn, David ^[1]

---

1. Brookhaven National Lab. (BNL), Upton, NY (United States)

In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high voltages in the OFF state and being able to operate in a high magnetic field. At Brookhaven National Laboratory we conceived a new kind of solid-state switch that can potentially meet all the specs: it is a HV silicon vertical JFET. Before designing and fabricating the JFET, we did a study using numerical TCAD simulations that demonstrate the feasibility of fabricating the device in a standard planar technology. As a result, we report such simulations, highlighting in particular a few key parameters to which the JFET performances are most sensitive.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), High Energy Physics (HEP)
• Grant/Contract Number: SC0012704
• OSTI ID: 1487243
• Report Number(s): BNL-209760-2018-JAAM
• Journal Information: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 919; ISSN 0168-9002
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
TCAD simulations
JFET
power devices
high voltage