A HV silicon vertical JFET: TCAD simulations
- Brookhaven National Lab. (BNL), Upton, NY (United States)
In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high voltages in the OFF state and being able to operate in a high magnetic field. At Brookhaven National Laboratory we conceived a new kind of solid-state switch that can potentially meet all the specs: it is a HV silicon vertical JFET. Before designing and fabricating the JFET, we did a study using numerical TCAD simulations that demonstrate the feasibility of fabricating the device in a standard planar technology. As a result, we report such simulations, highlighting in particular a few key parameters to which the JFET performances are most sensitive.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1487243
- Report Number(s):
- BNL-209760-2018-JAAM
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 919; ISSN 0168-9002
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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