skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Radiation Response of AlGaN-Channel HEMTs

Journal Article · · IEEE Transactions on Nuclear Science
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
+ Show Author Affiliations

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1485847
Alternate ID(s):
OSTI ID: 1485846; OSTI ID: 1487424
Report Number(s):
SAND-2018-13231J; SAND-2018-11424J; SAND-2018-7513J; 670237
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 66, Issue 1; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

Figures / Tables (15)

TABLE I:(p. 2)table TABLE I:
Fig. 1:(p. 6)figure Fig. 1:
Fig. 2:(p. 7)figure Fig. 2:
Fig. 3:(p. 8)figure Fig. 3:
Fig. 4:(p. 9)figure Fig. 4:
Fig. 5:(p. 10)figure Fig. 5:
Fig. 6:(p. 11)figure Fig. 6:
Fig. 7:(p. 12)figure Fig. 7:
Fig. 8:(p. 13)figure Fig. 8:
Fig. 9:(p. 14)figure Fig. 9:
Fig. 10:(p. 15)figure Fig. 10:
Fig. 11:(p. 16)figure Fig. 11:
Fig. 12:(p. 17)figure Fig. 12:
Fig. 13:(p. 18)figure Fig. 13:
Fig. 14:(p. 19)figure Fig. 14:

Similar Records

Radiation Response of AlGaN-Channel HEMTs.
Conference · Sun Jul 01 00:00:00 EDT 2018 · OSTI ID:1485847
+8 more
Radiation Response of AlGaN HEMTs.
Conference · Thu Feb 01 00:00:00 EST 2018 · OSTI ID:1485847
+6 more
Targeted Ion Radiation Response of AlGaN/GaN HEMT.
Conference · Fri Mar 01 00:00:00 EST 2019 · OSTI ID:1485847
+1 more

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
Aluminum Gallium Nitride (A1GaN)
Aluminum Nitride (AIN)
burnout
displacement damage (DD)
heavy ion
HEMT
High Electron Mobility Transistor
failure analysis
Gallium Nitride (GaN)
heavy ions
heavy ion testing
power
proton
radiation effects
radiation effects in devices
radiation hardness assurance
radiation-hardness assurance testing
semiconductor device breakdown
semiconductor device radiation effects
silicon
single-event burnout (SEB)
single-event effects (SEEs)
Total Ionizing Dose (TID)