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Title: Enhanced Terahertz Emission of GaAs Microstructures

Abstract

We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [2];  [2];  [1];  [1]
  1. Gwangju Institute of Science and Technology
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1485768
Report Number(s):
NREL/CP-5K00-72938
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 9-14 September 2018, Nagoya, Japan
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; gallium arsenide; microstructure; crystals; photonic band gap; surface emitting lasers; terahertz radiation; ultrafast optics

Citation Formats

Maeng, Inhee, Lee, Gyu-Seok, Kang, Chul, Ju, Gun-Wu, Park, Kwangwook, Son, Seoung-Bum, Lee, Yong-Tak, and Kee, Chul-Sik. Enhanced Terahertz Emission of GaAs Microstructures. United States: N. p., 2018. Web. doi:10.1109/IRMMW-THz.2018.8509970.
Maeng, Inhee, Lee, Gyu-Seok, Kang, Chul, Ju, Gun-Wu, Park, Kwangwook, Son, Seoung-Bum, Lee, Yong-Tak, & Kee, Chul-Sik. Enhanced Terahertz Emission of GaAs Microstructures. United States. doi:10.1109/IRMMW-THz.2018.8509970.
Maeng, Inhee, Lee, Gyu-Seok, Kang, Chul, Ju, Gun-Wu, Park, Kwangwook, Son, Seoung-Bum, Lee, Yong-Tak, and Kee, Chul-Sik. Mon . "Enhanced Terahertz Emission of GaAs Microstructures". United States. doi:10.1109/IRMMW-THz.2018.8509970.
@article{osti_1485768,
title = {Enhanced Terahertz Emission of GaAs Microstructures},
author = {Maeng, Inhee and Lee, Gyu-Seok and Kang, Chul and Ju, Gun-Wu and Park, Kwangwook and Son, Seoung-Bum and Lee, Yong-Tak and Kee, Chul-Sik},
abstractNote = {We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.},
doi = {10.1109/IRMMW-THz.2018.8509970},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Conference:
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