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Title: Advanced SiC MOSFET for Automotive Applications

Abstract

Research involved in this project is aimed at integrating a secondary source pad to a SiC DMOSFET switch through which a defined proportion of the drain current can be sensed. This sense current signal can then be fed to control circuitry that can shut off the MOSFET gate when drain current exceeds a threshold that can be correlated to fault conditions like high device temperature or short-circuit. Successful demonstration and subsequent commercialization of this technology would increase SiC MOSFET reliability in automotive and other demanding applications. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas and demonstrated unit-processes for device fabrication in short loops. Key findings of the development activity were: 1. The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome. 2. The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. It is likely that processes and designs developed would result in a SiC MOSFETmore » with source sense pad carrying a pre-defined proportion of the drain current.« less

Authors:
 [1]
  1. Global Power Technologies Group, Inc., Lake Forest, CA (United States)
Publication Date:
Research Org.:
Global Power Technologies Group, Inc., Lake Forest, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1485603
Report Number(s):
DOE-GPTG-7756-1
DOE Contract Number:  
SC0017756
Type / Phase:
SBIR (Phase I)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Silicon Carbide; SiC; MOSFET; Wide Bandgap

Citation Formats

Radhakrishnan, Rahul. Advanced SiC MOSFET for Automotive Applications. United States: N. p., 2018. Web.
Radhakrishnan, Rahul. Advanced SiC MOSFET for Automotive Applications. United States.
Radhakrishnan, Rahul. Fri . "Advanced SiC MOSFET for Automotive Applications". United States.
@article{osti_1485603,
title = {Advanced SiC MOSFET for Automotive Applications},
author = {Radhakrishnan, Rahul},
abstractNote = {Research involved in this project is aimed at integrating a secondary source pad to a SiC DMOSFET switch through which a defined proportion of the drain current can be sensed. This sense current signal can then be fed to control circuitry that can shut off the MOSFET gate when drain current exceeds a threshold that can be correlated to fault conditions like high device temperature or short-circuit. Successful demonstration and subsequent commercialization of this technology would increase SiC MOSFET reliability in automotive and other demanding applications. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas and demonstrated unit-processes for device fabrication in short loops. Key findings of the development activity were: 1. The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome. 2. The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. It is likely that processes and designs developed would result in a SiC MOSFET with source sense pad carrying a pre-defined proportion of the drain current.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

Technical Report:
This technical report may be released as soon as December 13, 2022
Other availability
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