skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm 2 specific on-resistance AlGaN/GaN Schottky barrier diode

Abstract

Here, Al 0.26Ga 0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance ( Ron-sp) from 1.5 to 60.7 mΩ cm 2 was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm 2 corresponding to a breakdown voltage upwards of 9 kV and a Ron-sp of 59 mΩ cm 2. This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al 0.26Ga 0.74N/GaN lateral structure.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1485455
Report Number(s):
SAND-2018-11934J
Journal ID: ISSN 0038-1101; 668767
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Solid-State Electronics
Additional Journal Information:
Journal Volume: 151; Journal Issue: C; Journal ID: ISSN 0038-1101
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Colón, Albert, Douglas, Erica A., Pope, Andrew J., Klein, Brianna A., Stephenson, Chad A., Van Heukelom, Michael S., Tauke-Pedretti, Anna, and Baca, Albert G. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode. United States: N. p., 2018. Web. doi:10.1016/j.sse.2018.10.009.
Colón, Albert, Douglas, Erica A., Pope, Andrew J., Klein, Brianna A., Stephenson, Chad A., Van Heukelom, Michael S., Tauke-Pedretti, Anna, & Baca, Albert G. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode. United States. doi:10.1016/j.sse.2018.10.009.
Colón, Albert, Douglas, Erica A., Pope, Andrew J., Klein, Brianna A., Stephenson, Chad A., Van Heukelom, Michael S., Tauke-Pedretti, Anna, and Baca, Albert G. Fri . "Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode". United States. doi:10.1016/j.sse.2018.10.009.
@article{osti_1485455,
title = {Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode},
author = {Colón, Albert and Douglas, Erica A. and Pope, Andrew J. and Klein, Brianna A. and Stephenson, Chad A. and Van Heukelom, Michael S. and Tauke-Pedretti, Anna and Baca, Albert G.},
abstractNote = {Here, Al0.26Ga0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance (Ron-sp) from 1.5 to 60.7 mΩ cm2 was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm2 corresponding to a breakdown voltage upwards of 9 kV and a Ron-sp of 59 mΩ cm2. This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al0.26Ga0.74N/GaN lateral structure.},
doi = {10.1016/j.sse.2018.10.009},
journal = {Solid-State Electronics},
issn = {0038-1101},
number = C,
volume = 151,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 26, 2019
Publisher's Version of Record

Save / Share: