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Title: Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Abstract

A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a ptype doped (1x10(16) cm(-3)) AlAs 0.47Sb 0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrodinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of R-sh= 90.9 Omega/sq which is in a good agreement with an experimental value of 97 Omega/sq.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1485323
Report Number(s):
PNNL-SA-136076
Journal ID: ISSN 0038-1101
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Solid-State Electronics
Additional Journal Information:
Journal Volume: 142; Journal Issue: C; Journal ID: ISSN 0038-1101
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
ELECTRON-MOBILITY TRANSISTORS

Citation Formats

Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V., and Kalna, K. Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. United States: N. p., 2018. Web. doi:10.1016/j.sse.2018.01.006.
Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V., & Kalna, K. Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. United States. doi:10.1016/j.sse.2018.01.006.
Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V., and Kalna, K. Sun . "Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS". United States. doi:10.1016/j.sse.2018.01.006.
@article{osti_1485323,
title = {Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS},
author = {Mohamed, A. H. and Oxland, R. and Aldegunde, M. and Hepplestone, S. P. and Sushko, P. V. and Kalna, K.},
abstractNote = {A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a ptype doped (1x10(16) cm(-3)) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrodinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of R-sh= 90.9 Omega/sq which is in a good agreement with an experimental value of 97 Omega/sq.},
doi = {10.1016/j.sse.2018.01.006},
journal = {Solid-State Electronics},
issn = {0038-1101},
number = C,
volume = 142,
place = {United States},
year = {2018},
month = {4}
}