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Title: 3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe 2

Journal Article · · Physical Review Letters

Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy VSe defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe2, a recently discovered pentagonal layered TMD. The VSe show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of VSe defects. This allows a demonstration of direct “writing” and “erasing” of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of VSe in PdSe2, which is much lower than S vacancy in MoS2 or an O vacancy in TiO2. As a result, this finding opens an opportunity of defect engineering in PdSe2 for such as controlled phase transformations and resistive-switching memory device application.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1484990
Alternate ID(s):
OSTI ID: 1465233
Journal Information:
Physical Review Letters, Vol. 121, Issue 8; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 60 works
Citation information provided by
Web of Science

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Cited By (8)

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors journal May 2019
Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy journal October 2019
Recent Progress on 2D Noble‐Transition‐Metal Dichalcogenides journal October 2019
Anisotropic Growth and Scanning Tunneling Microscopy Identification of Ultrathin Even‐Layered PdSe 2 Ribbons journal September 2019
Electronic transport in planar atomic-scale structures measured by two-probe scanning tunneling spectroscopy journal April 2019
Exploring the air stability of PdSe2 via electrical transport measurements and defect calculations journal December 2019
Ferroelastic lattice rotation and band-gap engineering in quasi 2D layered-structure PdSe 2 under uniaxial stress journal January 2019
Spin Polarization Properties of Pentagonal PdSe2 Induced by 3D Transition-Metal Doping: First-Principles Calculations journal November 2018

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