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Title: Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

Abstract

The synthesis of a Sr-based wide bandgap semiconductor via X-ray irradiation of strontium oxalate at high pressure has been demonstrated.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [1]
  1. Department of Physics and Astronomy; University of Nevada Las Vegas (UNLV); Las Vegas; USA
  2. Division of Geological and Planetary Sciences; California Institute of Technology; Pasadena; California; USA
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1484798
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Materials Chemistry C; Journal Volume: 6; Journal Issue: 46
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Evlyukhin, Egor, Kim, Eunja, Cifligu, Petrika, Goldberger, David, Schyck, Sarah, Harris, Blake, Torres, Sindi, Rossman, George R., and Pravica, Michael. Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions. United States: N. p., 2018. Web. doi:10.1039/c8tc04496a.
Evlyukhin, Egor, Kim, Eunja, Cifligu, Petrika, Goldberger, David, Schyck, Sarah, Harris, Blake, Torres, Sindi, Rossman, George R., & Pravica, Michael. Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions. United States. doi:10.1039/c8tc04496a.
Evlyukhin, Egor, Kim, Eunja, Cifligu, Petrika, Goldberger, David, Schyck, Sarah, Harris, Blake, Torres, Sindi, Rossman, George R., and Pravica, Michael. Mon . "Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions". United States. doi:10.1039/c8tc04496a.
@article{osti_1484798,
title = {Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions},
author = {Evlyukhin, Egor and Kim, Eunja and Cifligu, Petrika and Goldberger, David and Schyck, Sarah and Harris, Blake and Torres, Sindi and Rossman, George R. and Pravica, Michael},
abstractNote = {The synthesis of a Sr-based wide bandgap semiconductor via X-ray irradiation of strontium oxalate at high pressure has been demonstrated.},
doi = {10.1039/c8tc04496a},
journal = {Journal of Materials Chemistry C},
number = 46,
volume = 6,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}