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Title: Pressure-induced isostructural phase transition and charge transfer in superconducting FeSe

Journal Article · · Journal of Alloys and Compounds
 [1];  [2];  [3];  [3];  [4];  [5];  [5];  [5];  [6];  [7];  [6]; ORCiD logo [5]; ORCiD logo [3]
  1. Center for High Pressure Science and Technology Advanced Research, Shanghai (China); ShanghaiTech Univ., Shanghai (China)
  2. Huazhong Univ. of Science and Technology, Wuhan (China)
  3. Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
  4. Harbin Institute of Technology, Harbin (China)
  5. Argonne National Lab. (ANL), Argonne, IL (United States)
  6. Chinese Academy of Sciences, Shanghai (China)
  7. ShanghaiTech Univ., Shanghai (China)

Here, we present extensive investigations of the crystallographic phase diagram and electronic properties of the Fe-based superconductor FeSe under extreme conditions (high pressure (HP) and low temperature (LT)) by synchrotron X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS). An isostructural phase transition (Tetragonal (T) →high-pressure Tetragonal (T')) is discovered in FeSe at ~2.8 GPa based on the axial ratio c/a with finer pressure step as observed in Fe-As-based superconductor such as EuFe2As2. We also find a pressure-induced T' → MnP-type phase transition at 7.6 GPa in FeSe, which is consistent with the documented pressure-induced high-spin → low-spin transition (~6–7 GPa). These results reveal the pressure-induced structural phase transition sequence in FeSe at room temperature to be T → T' → T'+MnP-type at pressures of 0–10.6 GPa, enriching the crystallographic phase diagram. The HPLT XRD data also indicate that a sluggish structural phase transition (CmmaPnma) begins at 7.5 GPa, and these two phases coexist up to 26.5 GPa. The HP X-ray absorption near-edge spectroscopy (XANES) measurement shows that Eo of Se experiences a pressure-induced shift to high energy, evidencing strongly charge transfer between Fe and Se under high pressure. Our results shed lights on the correlation between crystallographic/electronic structure and superconductivity in this material.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1484745
Alternate ID(s):
OSTI ID: 1703722
Journal Information:
Journal of Alloys and Compounds, Vol. 767, Issue C; ISSN 0925-8388
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

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Cited By (1)

The fabrication of high-quality superconducting FeSe 1−x S x films via pulsed laser deposition journal January 2020