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Title: Electronic and Optical Properties of Two-Dimensional GaN from First-Principles

Abstract

Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory-National Energy Research Scientific Computing Center
Sponsoring Org.:
USDOE
OSTI Identifier:
1484740
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 12; Journal ID: ISSN 1530-6984
Country of Publication:
United States
Language:
English

Citation Formats

Sanders, Nocona, Bayerl, Dylan, Shi, Guangsha, Mengle, Kelsey A., and Kioupakis, Emmanouil. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.7b03003.
Sanders, Nocona, Bayerl, Dylan, Shi, Guangsha, Mengle, Kelsey A., & Kioupakis, Emmanouil. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles. United States. doi:10.1021/acs.nanolett.7b03003.
Sanders, Nocona, Bayerl, Dylan, Shi, Guangsha, Mengle, Kelsey A., and Kioupakis, Emmanouil. Tue . "Electronic and Optical Properties of Two-Dimensional GaN from First-Principles". United States. doi:10.1021/acs.nanolett.7b03003.
@article{osti_1484740,
title = {Electronic and Optical Properties of Two-Dimensional GaN from First-Principles},
author = {Sanders, Nocona and Bayerl, Dylan and Shi, Guangsha and Mengle, Kelsey A. and Kioupakis, Emmanouil},
abstractNote = {Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.},
doi = {10.1021/acs.nanolett.7b03003},
journal = {Nano Letters},
issn = {1530-6984},
number = 12,
volume = 17,
place = {United States},
year = {2017},
month = {11}
}