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Title: Capacitance of a Ge/SiGe heterostructure field-effect transistor.

Abstract

Abstract not provided.

Authors:
 [1];  [2]
  1. NHMFL
  2. SNL
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1484586
Report Number(s):
SAND2018-13502R
670589
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English

Citation Formats

Suslov, Alexey, and Lu, Tzu-Ming. Capacitance of a Ge/SiGe heterostructure field-effect transistor.. United States: N. p., 2018. Web. doi:10.2172/1484586.
Suslov, Alexey, & Lu, Tzu-Ming. Capacitance of a Ge/SiGe heterostructure field-effect transistor.. United States. doi:10.2172/1484586.
Suslov, Alexey, and Lu, Tzu-Ming. Thu . "Capacitance of a Ge/SiGe heterostructure field-effect transistor.". United States. doi:10.2172/1484586. https://www.osti.gov/servlets/purl/1484586.
@article{osti_1484586,
title = {Capacitance of a Ge/SiGe heterostructure field-effect transistor.},
author = {Suslov, Alexey and Lu, Tzu-Ming},
abstractNote = {Abstract not provided.},
doi = {10.2172/1484586},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}