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Title: Influence of deep levels on the electrical transport properties of CdZnTeSe detectors

Abstract

Here, we investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Posisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap - one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS are favorable for high electrical charge transport.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [3]
+ Show Author Affiliations
  1. Charles Univ., Prague (Czech Republic)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Savannah River National Lab., Aiken, SC (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1484437
Alternate Identifier(s):
OSTI ID: 1498920
Report Number(s):
BNL-209533-2018-JAAM; SRNL-STI-2018-00463
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
SC0012704; AC09-08SR22470
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CdZnTeSe; I-V; measurement; electric; field; deep; level; radiation; detector

Citation Formats

Rejhon, M, Roy, Utpal U., Franc, J., Dedic, V., Pekarek, J., Grill, R., and James, R. B. Influence of deep levels on the electrical transport properties of CdZnTeSe detectors. United States: N. p., 2018. Web. doi:10.1063/1.5063850.
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Rejhon, M, Roy, Utpal U., Franc, J., Dedic, V., Pekarek, J., Grill, R., & James, R. B. Influence of deep levels on the electrical transport properties of CdZnTeSe detectors. United States. https://doi.org/10.1063/1.5063850
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Rejhon, M, Roy, Utpal U., Franc, J., Dedic, V., Pekarek, J., Grill, R., and James, R. B. Mon . "Influence of deep levels on the electrical transport properties of CdZnTeSe detectors". United States. https://doi.org/10.1063/1.5063850. https://www.osti.gov/servlets/purl/1484437.
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@article{osti_1484437,
title = {Influence of deep levels on the electrical transport properties of CdZnTeSe detectors},
author = {Rejhon, M and Roy, Utpal U. and Franc, J. and Dedic, V. and Pekarek, J. and Grill, R. and James, R. B.},
abstractNote = {Here, we investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Posisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap - one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS are favorable for high electrical charge transport.},
doi = {10.1063/1.5063850},
url = {https://www.osti.gov/biblio/1484437}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 23,
volume = 124,
place = {United States},
year = {2018},
month = {12}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5063850
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