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Title: Investigation of GaN-on-GaN vertical p- n diode with regrown p-GaN by metalorganic chemical vapor deposition

Abstract

Here, to mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p- n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV and 3.0 eV, respectively. The forward current density increased slightly with the increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ~100 nm. This work provides valuable information of p-GaN regrowth and regrown GaN p- n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [1]
  1. Arizona State Univ., Tempe, AZ (United States)
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1484237
Grant/Contract Number:  
AR0000868
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Fu, Kai, Fu, Houqiang, Liu, Hanxiao, Alugubelli, Shanthan Reddy, Yang, Tsung -Han, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Montes, Jossue, Ponce, Fernando A., and Zhao, Yuji. Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition. United States: N. p., 2018. Web. doi:10.1063/1.5052479.
Fu, Kai, Fu, Houqiang, Liu, Hanxiao, Alugubelli, Shanthan Reddy, Yang, Tsung -Han, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Montes, Jossue, Ponce, Fernando A., & Zhao, Yuji. Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition. United States. doi:10.1063/1.5052479.
Fu, Kai, Fu, Houqiang, Liu, Hanxiao, Alugubelli, Shanthan Reddy, Yang, Tsung -Han, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Montes, Jossue, Ponce, Fernando A., and Zhao, Yuji. Mon . "Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition". United States. doi:10.1063/1.5052479.
@article{osti_1484237,
title = {Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition},
author = {Fu, Kai and Fu, Houqiang and Liu, Hanxiao and Alugubelli, Shanthan Reddy and Yang, Tsung -Han and Huang, Xuanqi and Chen, Hong and Baranowski, Izak and Montes, Jossue and Ponce, Fernando A. and Zhao, Yuji},
abstractNote = {Here, to mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV and 3.0 eV, respectively. The forward current density increased slightly with the increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ~100 nm. This work provides valuable information of p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.},
doi = {10.1063/1.5052479},
journal = {Applied Physics Letters},
number = 23,
volume = 113,
place = {United States},
year = {Mon Dec 03 00:00:00 EST 2018},
month = {Mon Dec 03 00:00:00 EST 2018}
}

Journal Article:
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