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Title: The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1484085
Report Number(s):
SAND2017-12842C
659059
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the International Workshop on UV Materials and Devices (IWUMD) held November 14-18, 2017 in Fukuoka, Japan.
Country of Publication:
United States
Language:
English

Citation Formats

Allerman, Andrew A., Crawford, Mary H., Pickrell, Gregory, Armstrong, Andrew, Abate, Vincent M., Smith, Michael L., and Cross, Karen Charlene. The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates.. United States: N. p., 2017. Web.
Allerman, Andrew A., Crawford, Mary H., Pickrell, Gregory, Armstrong, Andrew, Abate, Vincent M., Smith, Michael L., & Cross, Karen Charlene. The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates.. United States.
Allerman, Andrew A., Crawford, Mary H., Pickrell, Gregory, Armstrong, Andrew, Abate, Vincent M., Smith, Michael L., and Cross, Karen Charlene. Wed . "The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates.". United States. https://www.osti.gov/servlets/purl/1484085.
@article{osti_1484085,
title = {The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates.},
author = {Allerman, Andrew A. and Crawford, Mary H. and Pickrell, Gregory and Armstrong, Andrew and Abate, Vincent M. and Smith, Michael L. and Cross, Karen Charlene},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}

Conference:
Other availability
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