III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Anderson, P. Duke; Fischer, Arthur J.; Koleske, Daniel D.; Gunning, Brendan P.; Subramania, Ganapathi

doi:10.1364/OME.8.003543

Title: III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Journal Article · Fri Oct 26 00:00:00 EDT 2018 · Optical Materials Express

DOI:https://doi.org/10.1364/OME.8.003543· OSTI ID:1483968

Anderson, P. Duke ^[1]; Fischer, Arthur J. ^[2]; Koleske, Daniel D. ^[2]; Gunning, Brendan P. ^[2];

^[3]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Department of Electrical Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States). Department of Electrical and Computer Engineering

We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the removal of QWs with well-defined indium (In) concentration. Room-temperature micro-photoluminescence (μ-PL) measurements confirm the removal of one multiple quantum well (MQW) while preserving a QW of differing In concentration. Moreover, PhC cavity resonances, wholly unobservable before, are present following PEC etching. Our results indicate an interesting route for creating III-nitride membranes with tailorable emission wavelengths. Our top-down fabrication approach offers exciting opportunities for III-nitride based light emitters.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1483968

Report Number(s):: SAND-2018-12609J; 668736

Journal Information:: Optical Materials Express, Vol. 8, Issue 11; ISSN 2159-3930

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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