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Title: Isostructural metal-insulator transition in VO 2

Abstract

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

Authors:
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Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1483924
Grant/Contract Number:  
FG02-06ER46327
Resource Type:
Journal Article: Published Article
Journal Name:
Science
Additional Journal Information:
Journal Name: Science Journal Volume: 362 Journal Issue: 6418; Journal ID: ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Country of Publication:
United States
Language:
English

Citation Formats

Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., and Eom, C. B.. Isostructural metal-insulator transition in VO 2. United States: N. p., 2018. Web. doi:10.1126/science.aam9189.
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., & Eom, C. B.. Isostructural metal-insulator transition in VO 2. United States. doi:10.1126/science.aam9189.
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., and Eom, C. B.. Thu . "Isostructural metal-insulator transition in VO 2". United States. doi:10.1126/science.aam9189.
@article{osti_1483924,
title = {Isostructural metal-insulator transition in VO 2},
author = {Lee, D. and Chung, B. and Shi, Y. and Kim, G. -Y. and Campbell, N. and Xue, F. and Song, K. and Choi, S. -Y. and Podkaminer, J. P. and Kim, T. H. and Ryan, P. J. and Kim, J. -W. and Paudel, T. R. and Kang, J. -H. and Spinuzzi, J. W. and Tenne, D. A. and Tsymbal, E. Y. and Rzchowski, M. S. and Chen, L. Q. and Lee, J. and Eom, C. B.},
abstractNote = {The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.},
doi = {10.1126/science.aam9189},
journal = {Science},
number = 6418,
volume = 362,
place = {United States},
year = {Thu Nov 29 00:00:00 EST 2018},
month = {Thu Nov 29 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1126/science.aam9189

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