Solution growth of single-crystal perovskite structures
A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.
- Research Organization:
- Wisconsin Alumni Research Foundation, Madison, WI (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0002162
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Number(s):
- 10,077,507
- Application Number:
- 14/954,442
- OSTI ID:
- 1483380
- Resource Relation:
- Patent File Date: 2015 Nov 30
- Country of Publication:
- United States
- Language:
- English
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