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Title: Solution growth of single-crystal perovskite structures

Abstract

A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.

Inventors:
;
Publication Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1483380
Patent Number(s):
10,077,507
Application Number:
14/954,442
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
DOE Contract Number:  
SC0002162
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Nov 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jin, Song, and Fu, Yongping. Solution growth of single-crystal perovskite structures. United States: N. p., 2018. Web.
Jin, Song, & Fu, Yongping. Solution growth of single-crystal perovskite structures. United States.
Jin, Song, and Fu, Yongping. Tue . "Solution growth of single-crystal perovskite structures". United States. doi:. https://www.osti.gov/servlets/purl/1483380.
@article{osti_1483380,
title = {Solution growth of single-crystal perovskite structures},
author = {Jin, Song and Fu, Yongping},
abstractNote = {A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 18 00:00:00 EDT 2018},
month = {Tue Sep 18 00:00:00 EDT 2018}
}

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Works referenced in this record:

Synthesis and Characterization of Organic?Inorganic Perovskite Thin Films Prepared Using a Versatile Two-Step Dipping Technique
journal, January 1998

  • Liang, Kangning; Mitzi, David B.; Prikas, Michael T.
  • Chemistry of Materials, Vol. 10, Issue 1, p. 403-411
  • DOI: 10.1021/cm970568f