Depth-resolved charge reconstruction at the LaNiO3/CaMnO3 interface

Chandrasena, R. U.; Flint, C. L.; Yang, W.; Arab, Arian; Nemšák, S.; Gehlmann, M.; Özdöl, V. B.; Bisti, F.; Wijesekara, K. D.; Meyer-Ilse, J.; Gullikson, E.; Arenholz, E.; Ciston, J.; Schneider, C. M.; Strocov, V. N.; Suzuki, Y.; Gray, A. X.

doi:10.1103/PhysRevB.98.155103

Title: Depth-resolved charge reconstruction at the $LaNi O_{3} / CaMn O_{3}$ interface

Journal Article · Mon Oct 01 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.98.155103· OSTI ID:1483272

Chandrasena, R. U. ^[1]; Flint, C. L. ^[2]; Yang, W. ^[1]; Arab, Arian ^[1]; Nemšák, S. ^[3]; Gehlmann, M. ^[4]; Özdöl, V. B. ^[5]; Bisti, F. ^[6]; Wijesekara, K. D. ^[1]; Meyer-Ilse, J. ^[5]; Gullikson, E. ^[5]; Arenholz, E. ^[5]; Ciston, J. ^[5]; Schneider, C. M. ^[4]; Strocov, V. N. ^[6]; Suzuki, Y. ^[2]; Gray, A. X. ^[1]

Temple Univ., Philadelphia, PA (United States)
Stanford Univ., Stanford, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Forschungszentrum Julich GmbH, Julich (Germany)
Forschungszentrum Julich GmbH, Julich (Germany)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Paul Scherrer Inst. (PSI), Villigen (Switzerland)

Here, rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically abrupt interface between paramagnetic LaNiO₃ and antiferromagnetic CaMnO₃ exhibits interfacial ferromagnetism, which can be tuned via a thickness-dependent metal-insulator transition in LaNiO₃. Once fully understood, such emergent functionality could turn this archetypal Mott-interface system into a key building block for the above-mentioned future devices. Here, we use depth-resolved standing-wave photoemission spectroscopy in conjunction with scanning transmission electron microscopy and x-ray absorption spectroscopy, to demonstrate a depth-dependent charge reconstruction at the LaNiO₃/CaMnO₃ interface. Our measurements reveal an increased concentration of Mn³⁺ and Ni²⁺ cations at the interface, which create an electronic environment favorable for the emergence of interfacial ferromagnetism mediated via the Mn⁴⁺-Mn³⁺ ferromagnetic double exchange and Ni²⁺-O-Mn⁴⁺ superexchange mechanisms. Our findings suggest a strategy for designing functional Mott oxide heterostructures by tuning the interfacial cation characteristics via controlled manipulation of thickness, strain, and ionic defect states.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; SC0008505

OSTI ID:: 1483272

Alternate ID(s):: OSTI ID: 1475085

Journal Information:: Physical Review B, Vol. 98, Issue 15; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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References (53)

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