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Title: Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study

Abstract

The large non-saturating magnetoresistance (MR) of bulk WTe 2 is greatly reduced in thin films, and vdW heterojunction engineering can significantly enhance the MR effect.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [1];  [4]
  1. Beijing Computational Science Research Center, Beijing 100193, China, Department of Materials Science and Engineering, University of Utah
  2. Beijing Computational Science Research Center, Beijing 100193, China
  3. Hefei National Laboratory for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
  4. Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA, Collaborative Innovation Center of Quantum Matter
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1483106
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 47; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Hu, Lin, Kang, Lei, Yang, Jinlong, Huang, Bing, and Liu, Feng. Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study. United Kingdom: N. p., 2018. Web. doi:10.1039/C8NR04391D.
Hu, Lin, Kang, Lei, Yang, Jinlong, Huang, Bing, & Liu, Feng. Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study. United Kingdom. doi:10.1039/C8NR04391D.
Hu, Lin, Kang, Lei, Yang, Jinlong, Huang, Bing, and Liu, Feng. Thu . "Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study". United Kingdom. doi:10.1039/C8NR04391D.
@article{osti_1483106,
title = {Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study},
author = {Hu, Lin and Kang, Lei and Yang, Jinlong and Huang, Bing and Liu, Feng},
abstractNote = {The large non-saturating magnetoresistance (MR) of bulk WTe 2 is greatly reduced in thin films, and vdW heterojunction engineering can significantly enhance the MR effect.},
doi = {10.1039/C8NR04391D},
journal = {Nanoscale},
number = 47,
volume = 10,
place = {United Kingdom},
year = {Thu Dec 06 00:00:00 EST 2018},
month = {Thu Dec 06 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 2, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

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