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Title: Crystallization of electrically conductive visibly transparent ITO thin films by wavelength-range-specific pulsed Xe arc lamp annealing

Abstract

Here, the transparent electric conductors made of indium tin oxide (ITO)-doped glass prepared by a flash lamp annealing (FLA) process were compared with ITO-doped glass prepared via a conventional rapid thermal annealing (RTA) process. Stylus surface profilometry was used to determine thicknesses, scanning electron microscopy was used to image surfaces, X-ray diffraction was used to determine film structures, X-ray photoelectron spectroscopy was used to determine oxidation states and film compositions, 4-point probe measurements were used to determine electrical conductivities, UV–Vis spectroscopy was used to determine film transparencies, and selective light filtering was used to determine which wavelengths of light are needed to anneal ITO into a visibly transparent electrically conductive thin film via an FLA process. The results showed that FLA with visible light can be used to nearly instantaneously anneal ITO to create visibly transparent and electrically conductive ITO thin films on glass. The FLA process achieved this by predominately exciting unoxidized indium, unoxidized tin, tin monoxide (SnO), and non-stoichiometric indium oxide (InO x ), appropriately distributed in an electron beam physical vapor-deposited amorphous ITO thin film, to allow their oxidation and crystallization into an electrically conductive visibly transparent ITO. Though it is possible to prepare ITO-doped glass thatmore » is more transparent with an RTA process, the FLA process is significantly faster, has comparable electrical conductivity, and can strongly localize heating to areas of the as-deposited ITO thin film that are not electrically conductive and visibly transparent.« less

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [3]; ORCiD logo [4]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Kirtland Air Force Base, Albuquerque, NM (United States)
  4. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1482732
Report Number(s):
SAND-2018-12167J
Journal ID: ISSN 0022-2461; 669073
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Science
Additional Journal Information:
Journal Volume: 53; Journal Issue: 18; Journal ID: ISSN 0022-2461
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Thin films; flash lamp annealing; rapid thermal annealing; indium tin oxide; resistivity; transparent conducting oxide

Citation Formats

Plumley, John Bryan, Cook, Adam W., Larsen, Christopher A., Artyushkova, Kateryna, Han, Sang M., Peng, Thomas L., and Kemp, Richard A. Crystallization of electrically conductive visibly transparent ITO thin films by wavelength-range-specific pulsed Xe arc lamp annealing. United States: N. p., 2018. Web. doi:10.1007/s10853-018-2534-7.
Plumley, John Bryan, Cook, Adam W., Larsen, Christopher A., Artyushkova, Kateryna, Han, Sang M., Peng, Thomas L., & Kemp, Richard A. Crystallization of electrically conductive visibly transparent ITO thin films by wavelength-range-specific pulsed Xe arc lamp annealing. United States. doi:10.1007/s10853-018-2534-7.
Plumley, John Bryan, Cook, Adam W., Larsen, Christopher A., Artyushkova, Kateryna, Han, Sang M., Peng, Thomas L., and Kemp, Richard A. Fri . "Crystallization of electrically conductive visibly transparent ITO thin films by wavelength-range-specific pulsed Xe arc lamp annealing". United States. doi:10.1007/s10853-018-2534-7. https://www.osti.gov/servlets/purl/1482732.
@article{osti_1482732,
title = {Crystallization of electrically conductive visibly transparent ITO thin films by wavelength-range-specific pulsed Xe arc lamp annealing},
author = {Plumley, John Bryan and Cook, Adam W. and Larsen, Christopher A. and Artyushkova, Kateryna and Han, Sang M. and Peng, Thomas L. and Kemp, Richard A.},
abstractNote = {Here, the transparent electric conductors made of indium tin oxide (ITO)-doped glass prepared by a flash lamp annealing (FLA) process were compared with ITO-doped glass prepared via a conventional rapid thermal annealing (RTA) process. Stylus surface profilometry was used to determine thicknesses, scanning electron microscopy was used to image surfaces, X-ray diffraction was used to determine film structures, X-ray photoelectron spectroscopy was used to determine oxidation states and film compositions, 4-point probe measurements were used to determine electrical conductivities, UV–Vis spectroscopy was used to determine film transparencies, and selective light filtering was used to determine which wavelengths of light are needed to anneal ITO into a visibly transparent electrically conductive thin film via an FLA process. The results showed that FLA with visible light can be used to nearly instantaneously anneal ITO to create visibly transparent and electrically conductive ITO thin films on glass. The FLA process achieved this by predominately exciting unoxidized indium, unoxidized tin, tin monoxide (SnO), and non-stoichiometric indium oxide (InO x ), appropriately distributed in an electron beam physical vapor-deposited amorphous ITO thin film, to allow their oxidation and crystallization into an electrically conductive visibly transparent ITO. Though it is possible to prepare ITO-doped glass that is more transparent with an RTA process, the FLA process is significantly faster, has comparable electrical conductivity, and can strongly localize heating to areas of the as-deposited ITO thin film that are not electrically conductive and visibly transparent.},
doi = {10.1007/s10853-018-2534-7},
journal = {Journal of Materials Science},
issn = {0022-2461},
number = 18,
volume = 53,
place = {United States},
year = {2018},
month = {6}
}

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Works referenced in this record:

Transparent Conducting Oxides for Photovoltaics
journal, March 2007

  • Fortunato, Elvira; Ginley, David; Hosono, Hideo
  • MRS Bulletin, Vol. 32, Issue 03, p. 242-247
  • DOI: 10.1557/mrs2007.29

Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire Substrates
journal, December 2011

  • Lin, Cheng-Wei; Chen, Huey-Ing; Chen, Tai-You
  • IEEE Transactions on Electron Devices, Vol. 58, Issue 12
  • DOI: 10.1109/TED.2011.2167234

Tin oxide with a p–n heterojunction ensures both UV and visible light photocatalytic activity
journal, January 2014

  • Sinha, Arun Kumar; Manna, P. K.; Pradhan, Mukul
  • RSC Adv., Vol. 4, Issue 1
  • DOI: 10.1039/C3RA42740D

Electrical and optical properties of indium-tin oxide (ITO) films by ion-assisted deposition (IAD) at room temperature
journal, August 2013

  • Farhan, Mansour S.; Zalnezhad, Erfan; Bushroa, Abdul Razak
  • International Journal of Precision Engineering and Manufacturing, Vol. 14, Issue 8
  • DOI: 10.1007/s12541-013-0197-5

Spectroscopic ellipsometry investigation on the excimer laser annealed indium thin oxide sol–gel films
journal, February 2016


X‐ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition
journal, March 1987

  • Nelson, A. J.; Aharoni, H.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 2
  • DOI: 10.1116/1.574109

Basic materials physics of transparent conducting oxides
journal, January 2004

  • Edwards, P. P.; Porch, A.; Jones, M. O.
  • Dalton Transactions, Issue 19
  • DOI: 10.1039/b408864f

Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices
journal, December 1999

  • Kim, H.; Gilmore, C. M.; Piqué, A.
  • Journal of Applied Physics, Vol. 86, Issue 11
  • DOI: 10.1063/1.371708

Non-radiative relaxation of photoexcited chlorophylls: theoretical and experimental study
journal, September 2015

  • Bricker, William P.; Shenai, Prathamesh M.; Ghosh, Avishek
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep13625

Transparent conducting, anti-static and anti-static–anti-glare coatings on plastic substrates
journal, July 2001


Flash Lamp Annealing of ITO thin films on ultra-thin glass: Improvement of the electrical and optical properties
journal, August 2015

  • Weller, Stephanie; Junghähnel, Manuela
  • Vakuum in Forschung und Praxis, Vol. 27, Issue 4
  • DOI: 10.1002/vipr.201500586

Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion
journal, August 2010

  • Beard, Matthew C.; Midgett, Aaron G.; Hanna, Mark C.
  • Nano Letters, Vol. 10, Issue 8
  • DOI: 10.1021/nl101490z

Influence of precursor nature on the thermal growth of Tin–Indium oxide layers by MOCVD
journal, September 2013


Ultrasensitive visible light photoresponse and electrical transportation properties of nonstoichiometric indium oxide nanowire arrays by electrospinning
journal, January 2013

  • Huang, Siya; Ou, Gang; Cheng, Jing
  • Journal of Materials Chemistry C, Vol. 1, Issue 39
  • DOI: 10.1039/c3tc31051e

Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films
journal, September 2014


The fabrication of In 2 O 3 /In 2 S 3 /Ag nanocubes for efficient photoelectrochemical water splitting
journal, January 2016

  • Xu, Rui; Li, Haohua; Zhang, Wenwen
  • Physical Chemistry Chemical Physics, Vol. 18, Issue 4
  • DOI: 10.1039/C5CP05833C

Xe-arc flash annealing of indium tin oxide thin-films prepared on glass backplanes
journal, December 2015


Emerging Transparent Electrodes Based on Thin Films of Carbon Nanotubes, Graphene, and Metallic Nanostructures
journal, February 2011

  • Hecht, David S.; Hu, Liangbing; Irvin, Glen
  • Advanced Materials, Vol. 23, Issue 13, p. 1482-1513
  • DOI: 10.1002/adma.201003188